1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

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Features

  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • Lower thermal resistance option in over-molded plastic package: MRFX1K80N
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

RF Performance Tables

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
Reference Circuit
Part Number
27 CW 65 1800 CW 27.8 75.6 MRFX1K80H-27MHZ
64 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 MRFX1K80H-64MHZ
81.36 CW 62 1800 CW 25.1 78.7 MRFX1K80H-81MHZ
87.5-108 CW 60 1600 CW 23.6 82.5 MRFX1K80H-88MHZ
123/128 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0 MRFX1K80H-128MHZ
175 CW 60 1560 CW 23.5 75.9 MRFX1K80H-175MHZ
174-230 DohertyDVB-T (8k OFDM) 63 250 Avg. 21.3 43.3 MRFX1K80H-VHFDHY
230Pulse (100 µsec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1 MRFX1K80H-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
230 Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 14 W Peak
(3 dB Overdrive)
65 No Device Degradation

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Documentation

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Design Files

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