MRFE6VP6300H|300 W, 1.8-600 MHz, 50 V | NXP Semiconductors

Automotive

Industrial

Consumer

Technologies

1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

MRFE6VP6300H Active
The MRFE6VP6300HR3 and MRFE6VP6300HSR3 are high ruggedness devices, designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

See product image

Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

RF Performance Table

130, 230 MHz Broadband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 IRL
(dB)
Pulse (100 µsec,
20% Duty Cycle)		 300 Peak23026.574.0–16
CW300 Avg.13025.080.0–15
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 Watts CW Output Power
    • 300 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 Watts CW Operation

Buy/Parametrics

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPMRFE6VP6300Hen 4 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications. 1286295175156716097175 PSP 1.0 MB None None documents None 1286295175156716097175 /docs/en/data-sheet/MRFE6VP6300H.pdf 1015321 /docs/en/data-sheet/MRFE6VP6300H.pdf MRFE6VP6300H documents N N 2016-10-31 MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRFE6VP6300H.pdf /docs/en/data-sheet/MRFE6VP6300H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 29, 2011 980000996212993340 Data Sheet Y N MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L 4 A English 98ASA10793D, 465M-01, NI 780H-4L 1177631115779705085440 PSP 47.9 KB None None documents None 1177631115779705085440 /docs/en/package-information/98ASA10793D.pdf 47948 /docs/en/package-information/98ASA10793D.pdf SOT1827-1 documents N N 2016-10-31 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf /docs/en/package-information/98ASA10793D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10793D, NI-780H-4L false 0 MRFE6VP6300H downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRFE6VP6300H.pdf 2016-10-31 1286295175156716097175 PSP 1 Jul 29, 2011 Data Sheet RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications. None /docs/en/data-sheet/MRFE6VP6300H.pdf English documents 1015321 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6VP6300H.pdf MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRFE6VP6300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 1.0 MB MRFE6VP6300H N 1286295175156716097175 Package Information 2 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 /docs/en/package-information/98ASA10793D.pdf 2016-10-31 1177631115779705085440 PSP 4 Mar 21, 2016 Package Information 98ASA10793D, 465M-01, NI 780H-4L None /docs/en/package-information/98ASA10793D.pdf English documents 47948 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10793D.pdf 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA10793D, NI-780H-4L 47.9 KB SOT1827-1 N 1177631115779705085440 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

Documentation

Quick reference to our documentation types.

Filters

4 documents

Compact List

Design Files

Quick reference to our design files types.
Filters

1-5of 7 design files

Show All

Support

What do you need help with?

  • Narrow your search
Search