MRF8VP13350N|700-1300 MHz, 350 W CW, 50 V | NXP Semiconductors

700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

See product image

Features

  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.

Buy/Parametrics










































































































Documentation

Quick reference to our documentation types.

8 documents

Compact List

Application Note (2)
Data Sheet (1)
Package Information (2)
Supporting Information (1)
Technical Notes (1)
White Paper (1)

Design Files

Quick reference to our design files types.

5 design files

Support

What do you need help with?

Recently viewed products

There are no recently viewed products to display.