MRF6V12500H|500 W Pulse, 960-1215 MHz, 50 V

MRF6V12500H|500 W Pulse, 960-1215 MHz, 50 V | NXP Semiconductors

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MRF6V12500H

These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant

RF Performance Table

Typical Pulse Performance

V_DD = 50 Volts, I_DQ = 200 mA

Application	Signal Type	Pout⁽¹⁾ (W)	Freq. (MHz)	G_ps (dB)	η_D (%)
Narrowband Short Pulse	Pulse (128 µsec, 10% Duty Cycle)	500 Peak	1030	19.7	62.0
Narrowband Mode S ELM	Pulse (48 x (32 µsec on, 18 µsec off), Period 2.4 msec, 6.4% Long-term Duty Cycle)	500 Peak	1030	19.7	62.0
Broadband	Pulse (128 µsec, 10% Duty Cycle)	500 Peak	960-1215	18.5	57.0

1. Minimum output power for each specified pulse condition.

Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

Buy/Parametrics

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Design Resources

Design Files

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5 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 2Jul 22, 20111.2 MBMRF6V12500H_MDL_AWR

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Models
MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019524.8 KBMRF6V12500H_MDL_ADS

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Calculators
MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 201050.2 KBMRF6V12500H_MTTF_CALC

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5 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 2Jul 22, 2011 00:00:001.2 MBMRF6V12500H_MDL_AWR

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Models
MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00524.8 KBMRF6V12500H_MDL_ADS

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Calculators
MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 2010 00:00:0050.2 KBMRF6V12500H_MTTF_CALC

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960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

Product Details

Features

RF Performance Table

Typical Pulse Performance

Buy/Parametrics

Documentation

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Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Brochure (1)

RF Solutions for Commercial Aerospace[BR1608]

Data Sheet (1)

MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet[MRF6V12500H]

Package Information (3)

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins[SOT1792-1]

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins[SOT1793-1]

98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins[SOT1802-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

White Paper (1)

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications[50VRFLDMOSWP]

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Brochure (1)

RF Solutions for Commercial Aerospace[BR1608]

Data Sheet (1)

MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet[MRF6V12500H]

Package Information (3)

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins[SOT1792-1]

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins[SOT1793-1]

98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins[SOT1802-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

White Paper (1)

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications[50VRFLDMOSWP]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

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