MD8IC970N|850-940 MHz, 35 W Avg, 28 V | NXP Semiconductors

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850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

MD8IC970N Not Recommended for New Designs
The MD8IC970NR1 and MD8IC970GNR1 wideband integrated circuits are designed with on-chip prematching that make them usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. These devices have a 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency sub-band.

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Prematching. On-Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Table

850-940 MHz

Typical Two-Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency Gps
(dB)		 PAE
(%)		 IMD
(dBc)
850 MHz30.640.1–30.5
900 MHz31.942.4–31.0
940 MHz32.642.1–31.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point ≃ 79 Watts CW

Buy/Parametrics

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MD8IC970GN
Data Sheet

Replacement part(s): MD8IC970N

Not Recommended for New Designs

MD8IC970N
Data Sheet

Not Recommended for New Designs

N true 0 PSPMD8IC970Nen 7 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. 1297455899517706764690 PSP 519.2 KB None None documents None 1297455899517706764690 /docs/en/data-sheet/MD8IC970N.pdf 519183 /docs/en/data-sheet/MD8IC970N.pdf MD8IC970N documents N N 2016-10-31 MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MD8IC970N.pdf /docs/en/data-sheet/MD8IC970N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 5, 2011 980000996212993340 Data Sheet Y N MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Application Note Application Note 2 2 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 3 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 5 E English 1867-01, 16 Lead, Gull Wing Plastic TO-270 Wide Body Long 1155918480406726638082 PSP 82.7 KB None None documents None 1155918480406726638082 /docs/en/package-information/98ASA10740D.pdf 82738 /docs/en/package-information/98ASA10740D.pdf SOT1725-1 documents N N 2016-10-31 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins /docs/en/package-information/98ASA10740D.pdf /docs/en/package-information/98ASA10740D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 18, 2016 302435339416912908 Package Information D N 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins 6 E English 98ASA10739D, 1866-03, TO-270 Wide Body Long, 16 Lead, Plastic 1155918479219695929232 PSP 77.7 KB None None documents None 1155918479219695929232 /docs/en/package-information/98ASA10739D.pdf 77741 /docs/en/package-information/98ASA10739D.pdf SOT1728-1 documents N N 2016-10-31 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins /docs/en/package-information/98ASA10739D.pdf /docs/en/package-information/98ASA10739D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 18, 2016 302435339416912908 Package Information D N 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins White Paper White Paper 1 7 0 English Improved performance in 2nd generation Airfast<sup>&#174;</sup> RFICS provide PA designers compact, cost-effective device solutions for next generation base stations. 1431960797038715181022 PSP 167.4 KB None None documents None 1431960797038715181022 /docs/en/white-paper/AIRFASTWBFWP.pdf 167378 /docs/en/white-paper/AIRFASTWBFWP.pdf AIRFASTWBFWP documents N N 2016-10-31 Advances in Airfast RFICs White Paper /docs/en/white-paper/AIRFASTWBFWP.pdf /docs/en/white-paper/AIRFASTWBFWP.pdf White Paper N 918633085541740938 2024-02-09 pdf N en May 15, 2015 918633085541740938 White Paper Y N Advances in Airfast RFICs White Paper false 0 MD8IC970N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 2 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 3 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 Data Sheet 1 /docs/en/data-sheet/MD8IC970N.pdf 2016-10-31 1297455899517706764690 PSP 1 May 5, 2011 Data Sheet The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. None /docs/en/data-sheet/MD8IC970N.pdf English documents 519183 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MD8IC970N.pdf MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MD8IC970N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 519.2 KB MD8IC970N N 1297455899517706764690 Package Information 2 /docs/en/package-information/98ASA10740D.pdf 2016-10-31 1155918480406726638082 PSP 5 Mar 18, 2016 Package Information 1867-01, 16 Lead, Gull Wing Plastic TO-270 Wide Body Long None /docs/en/package-information/98ASA10740D.pdf English documents 82738 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10740D.pdf 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins /docs/en/package-information/98ASA10740D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins 82.7 KB SOT1725-1 N 1155918480406726638082 /docs/en/package-information/98ASA10739D.pdf 2016-10-31 1155918479219695929232 PSP 6 Mar 18, 2016 Package Information 98ASA10739D, 1866-03, TO-270 Wide Body Long, 16 Lead, Plastic None /docs/en/package-information/98ASA10739D.pdf English documents 77741 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10739D.pdf 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins /docs/en/package-information/98ASA10739D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins 77.7 KB SOT1728-1 N 1155918479219695929232 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 White Paper 1 /docs/en/white-paper/AIRFASTWBFWP.pdf 2016-10-31 1431960797038715181022 PSP 7 May 15, 2015 White Paper Improved performance in 2nd generation Airfast<sup>&#174;</sup> RFICS provide PA designers compact, cost-effective device solutions for next generation base stations. None /docs/en/white-paper/AIRFASTWBFWP.pdf English documents 167378 None 918633085541740938 2024-02-09 N /docs/en/white-paper/AIRFASTWBFWP.pdf Advances in Airfast RFICs White Paper /docs/en/white-paper/AIRFASTWBFWP.pdf documents 918633085541740938 White Paper N en None Y pdf 0 N N Advances in Airfast RFICs White Paper 167.4 KB AIRFASTWBFWP N 1431960797038715181022 true Y Products

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