AFM912N|12 W CW, 136-941 MHz, 7.5 V | NXP Semiconductors

12 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

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Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single−ended or in a push−pull configuration
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across each band
  • Extreme ruggedness
  • High linearity for: TETRA, SSB

RF Performance Tables

Typical Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gain
Compression
Pout
(W)
Gps
(dB)
ηD
(%)
941 P1dB 12.5 13.3 65.2
P3dB 15.7 11.3 69.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal
Type
VSWR Pin
(dBm)
Test
Voltage
Result
941 CW > 10:1 at all
Angles
32.9
(3 dB Overdrive)
10.0 No Device
Degradation

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CAD Model

Status

Not Recommended for New Designs

N true 0 PSPAFM912Nen 4 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English AFM912N 12 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment 1670541915064694414826 PSP 195.0 KB None None documents None 1670541915064694414826 /docs/en/data-sheet/AFM912N.pdf 195019 /docs/en/data-sheet/AFM912N.pdf AFM912N documents N N 2022-12-08 AFM912N 12 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM912N.pdf /docs/en/data-sheet/AFM912N.pdf Data Sheet N 980000996212993340 2022-12-08 pdf N en Nov 30, 2022 980000996212993340 Data Sheet Y N AFM912N 12 W over 136-941 MHz, 7.5 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices false 0 AFM912N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/AFM912N.pdf 2022-12-08 1670541915064694414826 PSP 1 Nov 30, 2022 Data Sheet AFM912N 12 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment None /docs/en/data-sheet/AFM912N.pdf English documents 195019 None 980000996212993340 2022-12-08 N /docs/en/data-sheet/AFM912N.pdf AFM912N 12 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM912N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFM912N 12 W over 136-941 MHz, 7.5 V Data Sheet 195.0 KB AFM912N N 1670541915064694414826 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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