AFM906N|6 W CW, 136-941 MHz, 7.5 V | NXP Semiconductors

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6 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

AFM906N Not Recommended for New Designs
The AFM906N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

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Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across the band
  • Exceptional thermal performance
  • Extreme ruggedness
  • High linearity for: TETRA, SSB
  • RoHS compliant
  • Output stage VHF band handheld radio
  • Output stage UHF band handheld radio
  • Output stage for 700-800 MHz handheld radio
  • Generic 6 W driver for ISM and broadcast final stage transistors

RF Performance Tables

Wideband Performance

(In 440-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Pin
(W)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
440-520(1,2)0.1616.262.06.5

Narrowband Performance

(7.5 Vdc, IDQ = 100mA, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
520(3)20.370.86.8

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
520(3) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)		 10.8 No Device Degradation
1. Measured in 440-520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband production test fixture.

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AFM906N
Data Sheet

Not Recommended for New Designs

N true 0 PSPAFM906Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English AFM906N 6 W over 136-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld radio equipment 1469753932048701247363 PSP 870.0 KB None None documents None 1469753932048701247363 /docs/en/data-sheet/AFM906N.pdf 869954 /docs/en/data-sheet/AFM906N.pdf AFM906N documents N N 2018-11-02 AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM906N.pdf /docs/en/data-sheet/AFM906N.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Nov 2, 2018 980000996212993340 Data Sheet Y N AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 B English 1472460122444712310725 PSP 51.9 KB None None documents None 1472460122444712310725 /docs/en/package-information/98ASA00868D.pdf 51876 /docs/en/package-information/98ASA00868D.pdf SOT1862-1 documents N N 2016-11-09 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf /docs/en/package-information/98ASA00868D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jul 27, 2016 302435339416912908 Package Information D N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins false 0 AFM906N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/AFM906N.pdf 2018-11-02 1469753932048701247363 PSP 1 Nov 2, 2018 Data Sheet AFM906N 6 W over 136-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld radio equipment None /docs/en/data-sheet/AFM906N.pdf English documents 869954 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/AFM906N.pdf AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM906N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet 870.0 KB AFM906N N 1469753932048701247363 Package Information 1 /docs/en/package-information/98ASA00868D.pdf 2016-11-09 1472460122444712310725 PSP 4 Jul 27, 2016 Package Information None /docs/en/package-information/98ASA00868D.pdf English documents 51876 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00868D.pdf 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins 51.9 KB SOT1862-1 N 1472460122444712310725 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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