MRF8VP13350N|700-1300 MHz, 350 W CW, 50 V

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MRF8VP13350N

These 350 W CW transistors, MRF8VP13350N and MRF8VP13350GN, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation.

See product image

Data Sheet

Application Notes

Product Details

Features

Internally input matched for ease of use
Device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 50 V_DD operation
Suitable for linear application with appropriate biasing
Integrated ESD protection
RoHS Compliant

915 MHz industrial heating/welding systems
1300 MHz particle accelerators
900 MHz TETRA base stations

Part numbers include: MRF8VP13350GN, MRF8VP13350N.

RF Performance Tables

1300 MHz

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	G_ps (dB)	η_D (%)	Pout (W)
1300⁽¹⁾	Pulse (100 µsec, 20% Duty Cycle)	19.2	58.0	350 Peak

915 MHz

In 915 MHz reference circuit, V_DD = 48 Vdc

Frequency (MHz)	Signal Type	G_ps (dB)	η_D (%)	Pout (W)
915	CW	20.7	67.5	355

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
1300⁽¹⁾	Pulse (100 µsec, 20% Duty Cycle)	> 20:1 at all Phase Angles	9.6 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 1300 MHz pulse narrowband test circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 8 documents

^{Data Sheet}
MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet

PDFRev 2Feb 17, 2017821.1 KBMRF8VP13350NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

PDFRev EMar 22, 201676.8 KBSOT1825-1English
^{Package Information}
98ASA10833D

PDFRev BMar 22, 201669.8 KBSOT1818-4English
^{Supporting Information}
New NXP^® RF Industrial Transistor

PDFRev 0May 5, 2015421.7 KBMRF8VP13350N_TRN_SLEnglish
^{White Paper}
RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power

PDFRev 1Oct 19, 2017414.0 KBrf-energy-in-medicine-white-paperEnglish

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Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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^Models
MRF8VP13350N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00170.7 KBMRF8VP13350N_MDL_ADS
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^Models
MRF8VP13350N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:00461.9 KBMRF8VP13350N_MDL_AWR
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^Calculators
MRF8VP13350N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jan 11, 2017 00:00:0041.9 KBMRF8VP13350N_MTTF_CALC
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700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors