AFT05MS006N|6.0 W CW, 136-941 MHz, 7.5 V

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AFT05MS006N

The AFT05MS006NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700-800 MHz Handheld Radio

Part numbers include: AFT05MS006N.

RF Performance Tables

Narrowband Performance

(7.5 Vdc, I_DQ = 100 mA, T_A = 25°C, CW)

Frequency (MHz)	G_ps (dB)	η_D (%)	Pout (W)
520⁽¹⁾	18.3	73.0	6.0

Wideband Performance

(7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	Pin (W)	G_ps (dB)	η_D (%)	Pout (W)
136-174	0.19	15.5	60.0	6.0
440-520⁽²⁾	0.15	16.3	65.0	6.4
760-870⁽³⁾	0.20	15.2	58.5	6.7

Ruggedness, 520 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
520⁽¹⁾	CW	> 65:1 at all Phase Angles	0.12 (3 dB Overdrive)	10.8	No Device Degradation

1. Measured in 520 MHz narrowband test circuit.
2. Measured in 440-520 MHz UHF broadband reference circuit.
3. Measured in 760-870 MHz UHF broadband reference circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

^{Data Sheet}
AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

PDFRev 0Feb 24, 2014934.8 KBAFT05MS006NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Package Information}
98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

PDFRev AFeb 15, 201655.3 KBSOT1811-2English
^{Supporting Information}
Airfast^® Mobile Radio Solutions

PDFRev 0Mar 12, 2014907.1 KBAIRFAST_MOBILE_RADIO_TRN_SIEnglish

Design Resources

Design Files

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1-5 of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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AFT05MS006N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00217.8 KBAFT05MS006N_MDL_ADS
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^Models
AFT05MS006NT1 S-Parameters

S2PRev 0May 13, 2014 00:00:0030.5 KBAFT05MS006N_SP
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^Models
AFT05MS006N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Apr 2, 2015 00:00:00599.5 KBAFT05MS006N_MDL_AWR
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^{Printed Circuit Boards and Schematics}
AFT05MS006N 760-870 MHz Broadband PCB DXF file

ZIPRev 0Feb 21, 2014 00:00:0018.2 KBAFT05MS006N_760_870_PCB
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^{Printed Circuit Boards and Schematics}
AFT05MS006N 520 MHz Narrowband PCB DXF file

ZIPRev 0Feb 21, 2014 00:00:00361.2 KBAFT05MS006N_520NB_PCB
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Show All

136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Narrowband Performance

Wideband Performance

Ruggedness, 520 MHz

Buy/Parametrics

Documentation

Filter by

AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

Airfast^® Mobile Radio Solutions

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

AFT05MS006N RF High-Power Model ADS Product Model Design Kit

AFT05MS006NT1 S-Parameters

AFT05MS006N RF High-Power Model AWR Product Model Design Kit

AFT05MS006N 760-870 MHz Broadband PCB DXF file

AFT05MS006N 520 MHz Narrowband PCB DXF file

Filter By

Support

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Suggested Links

136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Narrowband Performance

Wideband Performance

Ruggedness, 520 MHz

Buy/Parametrics

Documentation

Filter by

AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

Airfast® Mobile Radio Solutions

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

AFT05MS006N RF High-Power Model ADS Product Model Design Kit

AFT05MS006NT1 S-Parameters

AFT05MS006N RF High-Power Model AWR Product Model Design Kit

AFT05MS006N 760-870 MHz Broadband PCB DXF file

AFT05MS006N 520 MHz Narrowband PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

Airfast^® Mobile Radio Solutions