MRF1K50N|1500 W CW, 1.8-500 MHz, 50 V | NXP Semiconductors

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1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF1K50N Not Recommended for New Designs
These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

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Features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 50 V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Recommended driver: MRFE6VS25N (25 W)
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,2)CW1421 CW23.183.2
230(3,4)Pulse
(100 µsec, 20% Duty Cycle)		1500 Peak23.475.1

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 15 Peak
(3 dB Overdrive)		 50 No Device Degradation
1. Data from 87.5-108 MHz wideband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Data from 230 MHz narrowband production test fixture.
4. All data measured in fixture with device soldered to heatsink.

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N true 0 PSPMRF1K50Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 en_US en_US en Data Sheet Data Sheet 1 1 0 English MRF1K50N 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1478646299605702389316 PSP 841.3 KB None None documents None 1478646299605702389316 /docs/en/data-sheet/MRF1K50N.pdf 841315 /docs/en/data-sheet/MRF1K50N.pdf MRF1K50N documents N N 2016-11-08 MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50N.pdf /docs/en/data-sheet/MRF1K50N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 3, 2016 980000996212993340 Data Sheet Y N MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Package Information Package Information 2 3 B English 1472549751616730407876 PSP 77.6 KB None None documents None 1472549751616730407876 /docs/en/package-information/98ASA00818D.pdf 77636 /docs/en/package-information/98ASA00818D.pdf SOT1824-1 documents N N 2016-11-09 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00818D.pdf /docs/en/package-information/98ASA00818D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 9, 2016 302435339416912908 Package Information D N 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 4 C English 1423774835794718892944 PSP 72.8 KB None None documents None 1423774835794718892944 /docs/en/package-information/98ASA00506D.pdf 72759 /docs/en/package-information/98ASA00506D.pdf SOT1816-1 documents N N 2016-10-31 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf /docs/en/package-information/98ASA00506D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins false 0 MRF1K50N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/MRF1K50N.pdf 2016-11-08 1478646299605702389316 PSP 1 Nov 3, 2016 Data Sheet MRF1K50N 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRF1K50N.pdf English documents 841315 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF1K50N.pdf MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet 841.3 KB MRF1K50N N 1478646299605702389316 Package Information 2 /docs/en/package-information/98ASA00818D.pdf 2016-11-09 1472549751616730407876 PSP 3 Mar 9, 2016 Package Information None /docs/en/package-information/98ASA00818D.pdf English documents 77636 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00818D.pdf 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00818D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 77.6 KB SOT1824-1 N 1472549751616730407876 /docs/en/package-information/98ASA00506D.pdf 2016-10-31 1423774835794718892944 PSP 4 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00506D.pdf English documents 72759 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00506D.pdf 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 72.8 KB SOT1816-1 N 1423774835794718892944 true Y Products

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