A3T09S100N|100 W CW over 136 to 941 MHz, 32 V | NXP Semiconductors

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100 W CW over 136 to 941 MHz, 32 V Airfast® RF Power LDMOS Transistor

A3T09S100N Not Recommended for New Designs

Designed for two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in radio equipment.

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Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Wideband — full power across each mobile radio band
  • Exceptional thermal performance
  • High linearity for: TETRA, SSB, LTE
  • RoHs compliant
  • Output stage for VHF, UHF and 900 MHz 28 V base stations
  • Output stage for VHF, UHF and 900 MHz high performance mobile radios

RF Performance Tables

Typical Single-Carrier W–CDMA Production Fixture Performance

VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Avg. Pout
(W)
880 22.8 33.8 15

Typical Reference Circuit Performance

VDD = 28 Vdc, IDQ = 450 mA, Pin = 0.125 W, CW
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
136 28.5 64.0 90

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal
Type		 VSWR Pin
(W)		 Test
Voltage		 Result
880 CW > 10:1 at all Phase Angles 1.3 32 No Device Degradation
136 CW > 5:1 at all Phase Angles 0.2 32 No Device Degradation

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N true 0 PSPA3T09S100Nen 4 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3T09S100N Airfast<sup>&reg;</sup> RF power LDMOS transistor designed for two-way radio applications with frequencies from 136 to 941 MHz. 1615571342644719185144 PSP 432.0 KB None None documents None 1615571342644719185144 /docs/en/data-sheet/A3T09S100N.pdf 431965 /docs/en/data-sheet/A3T09S100N.pdf A3T09S100N documents N N 2021-03-12 A3T09S100N 136-941 MHz, 100 W CW, 32 V Data Sheet /docs/en/data-sheet/A3T09S100N.pdf /docs/en/data-sheet/A3T09S100N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 11, 2021 980000996212993340 Data Sheet Y N A3T09S100N 136-941 MHz, 100 W CW, 32 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices false 0 A3T09S100N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A3T09S100N.pdf 2021-03-12 1615571342644719185144 PSP 1 Mar 11, 2021 Data Sheet A3T09S100N Airfast<sup>&reg;</sup> RF power LDMOS transistor designed for two-way radio applications with frequencies from 136 to 941 MHz. None /docs/en/data-sheet/A3T09S100N.pdf English documents 431965 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3T09S100N.pdf A3T09S100N 136-941 MHz, 100 W CW, 32 V Data Sheet /docs/en/data-sheet/A3T09S100N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3T09S100N 136-941 MHz, 100 W CW, 32 V Data Sheet 432.0 KB A3T09S100N N 1615571342644719185144 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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