A2T27S020N|400-2700 MHz, 2.5 W Avg, 28 V | NXP Semiconductors

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400-2700 MHz, 2.5 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T27S020N Active
The A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.

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Features

  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • Universal broadband driver
  • RoHS compliant

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1805 MHz20.820.99.4–44.6–9
1840 MHz21.120.99.3–45.6–16
1880 MHz20.720.69.1–45.5–13

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2110 MHz19.520.19.3–46.4–10
2140 MHz19.819.89.0–45.0–13
2170 MHz19.720.18.9–44.9–11

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2575 MHz17.620.39.3–44.2–8
2605 MHz18.620.49.0–41.3–10
2635 MHz18.020.18.6–40.7–6
1. All data measured in fixture with device soldered to heatsink.

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A2T27S020GN
Data Sheet

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N true 0 PSPA2T27S020Nen 6 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations 1490337303645729746876 PSP 504.0 KB None None documents None 1490337303645729746876 /docs/en/data-sheet/A2T27S020N.pdf 503988 /docs/en/data-sheet/A2T27S020N.pdf A2T27S020N documents N N 2017-03-23 A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T27S020N.pdf /docs/en/data-sheet/A2T27S020N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 21, 2019 980000996212993340 Data Sheet Y N A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet Application Note Application Note 2 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 5 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 6 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 A2T27S020N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 3 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 Data Sheet 1 /docs/en/data-sheet/A2T27S020N.pdf 2017-03-23 1490337303645729746876 PSP 1 Mar 21, 2019 Data Sheet A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T27S020N.pdf English documents 503988 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T27S020N.pdf A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T27S020N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet 504.0 KB A2T27S020N N 1490337303645729746876 Package Information 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 5 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 6 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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