MHT1803A|1.8-50 MHz, 300 W CW, 50 V | NXP Semiconductors

1.8-50 MHz, 300 W CW, 50 V RF LDMOS Transistor for Consumer and Commercial Cooking

  • This page contains information on a product that is not recommended for new designs.

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Features

  • Characterized from 30 to 50 V
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • 150°C case operating temperature
  • 175°C die temperature capability
  • RoHS compliant
  • Consumer cooking
  • Commercial cooking

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ = 50 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
40.68CW33028.279.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
40.68Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles2 Peak
(3 dB Overdrive)
50No Device Degradation

Buy/Parametrics










































































































N true 0 PSPMHT1803Aen 2 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Technical Notes Technical Notes 1 1 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 2 A English TO-247-3, 98ASA01082D, SOT1930-1 1531135258266700861459 PSP 186.4 KB None None documents None 1531135258266700861459 /docs/en/package-information/SOT1930-1.pdf 186374 /docs/en/package-information/SOT1930-1.pdf sot1930-1 documents N N 2018-07-09 TO-247-3, 98ASA01082D /docs/en/package-information/SOT1930-1.pdf /docs/en/package-information/SOT1930-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 13, 2019 302435339416912908 Package Information Y N TO-247-3, 98ASA01082D false 0 MHT1803A downloads en true 1 Y PSP Package Information 1 /docs/en/package-information/SOT1930-1.pdf 2018-07-09 1531135258266700861459 PSP 2 Feb 13, 2019 Package Information TO-247-3, 98ASA01082D, SOT1930-1 None /docs/en/package-information/SOT1930-1.pdf English documents 186374 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1930-1.pdf TO-247-3, 98ASA01082D /docs/en/package-information/SOT1930-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N TO-247-3, 98ASA01082D 186.4 KB sot1930-1 N 1531135258266700861459 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 1 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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