MRFE6VP61K25H|1250 W CW, 1.8-600 MHz | NXP Semiconductors

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1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP61K25H Active
These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

See product image

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)
Pulse
(100 µsec, 20% Duty Cycle)		 1250 Peak23024.074.0
CW 1250 CW23022.974.6

Application Circuits — Typical Performance

Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
27CW13002781
40CW13002685
81.36CW12502784
87.5-108CW11002480
144-148CW12502678
170-230DVBT2252530
352Pulse
(200 µsec,
20% Duty Cycle)		125021.566
352CW115020.568
500CW10001858

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pout
(W)		 Test
Voltage		 Result
230 Pulse
(100 µsec,
20% Duty Cycle)		 >65:1 at all
Phase Angles		 1500 Peak
(3 dB Overdrive)		 50 No Device
Degradation

Buy/Parametrics

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N true 0 PSPMRFE6VP61K25Hen 6 Data Sheet Data Sheet t520 1 Package Information Package Information t790 3 Technical Notes Technical Notes t521 1 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 1 1 4.1 English MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. 1289594120780716045018 PSP 990.4 KB None None documents None 1289594120780716045018 /docs/en/data-sheet/MRFE6VP61K25H.pdf 990366 /docs/en/data-sheet/MRFE6VP61K25H.pdf MRFE6VP61K25H documents N N 2016-10-31 MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP61K25H.pdf /docs/en/data-sheet/MRFE6VP61K25H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 11, 2014 980000996212993340 Data Sheet Y N MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 3 3 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 4 B English 1349216465058725247011 PSP 48.5 KB None None documents None 1349216465058725247011 /docs/en/package-information/98ASA00459D.pdf 48461 /docs/en/package-information/98ASA00459D.pdf SOT1806-2 documents N N 2016-10-31 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf /docs/en/package-information/98ASA00459D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 29, 2016 302435339416912908 Package Information D N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins White Paper White Paper 1 6 1 English NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. 1486618696473728474245 PSP 414.0 KB None None documents None 1486618696473728474245 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 413950 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf rf-energy-in-medicine-white-paper documents N N 2017-02-08 RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Oct 19, 2017 918633085541740938 White Paper Y N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power false 0 MRFE6VP61K25H downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRFE6VP61K25H.pdf 2016-10-31 1289594120780716045018 PSP 1 Mar 11, 2014 Data Sheet MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. None /docs/en/data-sheet/MRFE6VP61K25H.pdf English documents 990366 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6VP61K25H.pdf MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP61K25H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4.1 N N MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet 990.4 KB MRFE6VP61K25H N 1289594120780716045018 Package Information 3 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 3 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ASA00459D.pdf 2016-10-31 1349216465058725247011 PSP 4 Feb 29, 2016 Package Information None /docs/en/package-information/98ASA00459D.pdf English documents 48461 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00459D.pdf 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 48.5 KB SOT1806-2 N 1349216465058725247011 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 White Paper 1 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 2017-02-08 1486618696473728474245 PSP 6 Oct 19, 2017 White Paper NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. None /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf English documents 413950 None 918633085541740938 2022-12-07 N /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf documents 918633085541740938 White Paper N en None Y pdf 1 N N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power 414.0 KB rf-energy-in-medicine-white-paper N 1486618696473728474245 true Y Products

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