MRFX1K80N|1800 W CW, 1.8-400 MHz, 65 V | NXP Semiconductors

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1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX1K80N Active

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The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

Features

  • Low thermal resistance version of MRFX1K80H using NXP's OM-1230 over-molded plastic package
  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

RF Performance Tables

Typical Performance

Frequency
(MHz)		 Signal Type VDD
(V)		 Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108 (1,2)CW601670 CW23.883.5
230 (3)Pulse
(100 µsec, 20% Duty Cycle)		651800 Peak24.475.7

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 14 Peak
(3 dB Overdrive)		 65 No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband production test fixture.

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MRFX1K80N-230MHZ
Data Sheet

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MRFX1K80N-88MHZ
Data Sheet

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N true 0 PSPMRFX1K80Nen 5 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English MRFX1K80N 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1523598041932715105828 PSP 1.7 MB None None documents None 1523598041932715105828 /docs/en/data-sheet/MRFX1K80N.pdf 1683228 /docs/en/data-sheet/MRFX1K80N.pdf MRFX1K80N documents N N 2018-04-12 MRFX1K80N 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80N.pdf /docs/en/data-sheet/MRFX1K80N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 10, 2018 980000996212993340 Data Sheet Y N MRFX1K80N 1800 W CW, 1.8-400 MHz, 65 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 4 B English 1472549751616730407876 PSP 77.6 KB None None documents None 1472549751616730407876 /docs/en/package-information/98ASA00818D.pdf 77636 /docs/en/package-information/98ASA00818D.pdf SOT1824-1 documents N N 2016-11-09 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00818D.pdf /docs/en/package-information/98ASA00818D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 9, 2016 302435339416912908 Package Information D N 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 5 C English 1423774835794718892944 PSP 72.8 KB None None documents None 1423774835794718892944 /docs/en/package-information/98ASA00506D.pdf 72759 /docs/en/package-information/98ASA00506D.pdf SOT1816-1 documents N N 2016-10-31 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf /docs/en/package-information/98ASA00506D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins false 0 MRFX1K80N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/MRFX1K80N.pdf 2018-04-12 1523598041932715105828 PSP 1 Apr 10, 2018 Data Sheet MRFX1K80N 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRFX1K80N.pdf English documents 1683228 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX1K80N.pdf MRFX1K80N 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MRFX1K80N 1800 W CW, 1.8-400 MHz, 65 V Data Sheet 1.7 MB MRFX1K80N N 1523598041932715105828 Package Information 2 /docs/en/package-information/98ASA00818D.pdf 2016-11-09 1472549751616730407876 PSP 4 Mar 9, 2016 Package Information None /docs/en/package-information/98ASA00818D.pdf English documents 77636 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00818D.pdf 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00818D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 77.6 KB SOT1824-1 N 1472549751616730407876 /docs/en/package-information/98ASA00506D.pdf 2016-10-31 1423774835794718892944 PSP 5 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00506D.pdf English documents 72759 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00506D.pdf 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 72.8 KB SOT1816-1 N 1423774835794718892944 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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