1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

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Features

  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant

Part numbers include: MRFE6VS25L.

RF Performance Tables

HF, 1.8-30 MHz

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
1.8 to 30(1,3)Two-Tone
(10 kHz spacing)
25 PEP25.050.0–28

30-512 MHz Broadband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
30-512(2,3)Two-Tone
(200 kHz spacing)
25 PEP17.332.0–32

512 MHz Narrowband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512(4)Pulse (100 µsec,
20% Duty Cycle)
25 Peak25.974.0
512(4)CW2526.075.0

Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
30(1)CW>65:1
at all Phase
Angles
0.11
(3 dB
Overdrive)
50No
Device
Degradation
512(2)CW0.95
(3 dB
Overdrive)
512(4)Pulse
(100 µsec,
20% Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
512(4)CW0.14
(3 dB
Overdrive)
1. Measured in 1.8-30 MHz broadband reference circuit.
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.

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Documentation

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4 documents

Design Files

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