A3I35D025WN|3200-4000 MHz, 3.4 W Avg., 28 V | NXP Semiconductors

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3200-4000 MHz, 3.4 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

A3I35D025WN Not Recommended for New Designs
The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Product Details

Features

  • Designed for wide instantaneous bandwidth applications
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 72 mA, IDQ2(A+B) = 260 mA, Pout = 3.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
3400 MHz28.516.5–46.5
3500 MHz28.817.0–46.3
3600 MHz28.917.3–46.1
3700 MHz28.717.7–46.4
3800 MHz28.517.9–46.2
1. All data measured in fixture with device soldered to heatsink.

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A3I35D025WGN
Data Sheet

Not Recommended for New Designs

A3I35D025WN
Data Sheet

Not Recommended for New Designs

N true 0 PSPA3I35D025WNen 4 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations 1528772875293722930243 PSP 711.8 KB None None documents None 1528772875293722930243 /docs/en/data-sheet/A3I35D025WN.pdf 711766 /docs/en/data-sheet/A3I35D025WN.pdf A3I35D025WN documents N N 2018-06-11 A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I35D025WN.pdf /docs/en/data-sheet/A3I35D025WN.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 11, 2018 980000996212993340 Data Sheet Y N A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 3 B English 98ASA00583D, TO-270WB-17 1427423269558736551615 PSP 86.9 KB None None documents None 1427423269558736551615 /docs/en/package-information/98ASA00583D.pdf 86910 /docs/en/package-information/98ASA00583D.pdf SOT1730-1 documents N N 2016-10-31 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins /docs/en/package-information/98ASA00583D.pdf /docs/en/package-information/98ASA00583D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 22, 2016 302435339416912908 Package Information D N 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins 4 B English 98ASA00729D, TO-270WBG-17 1427423270227715980928 PSP 88.0 KB None None documents None 1427423270227715980928 /docs/en/package-information/98ASA00729D.pdf 87977 /docs/en/package-information/98ASA00729D.pdf SOT1730-2 documents N N 2016-10-31 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins /docs/en/package-information/98ASA00729D.pdf /docs/en/package-information/98ASA00729D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 18, 2016 302435339416912908 Package Information D N 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins false 0 A3I35D025WN downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/A3I35D025WN.pdf 2018-06-11 1528772875293722930243 PSP 1 Jun 11, 2018 Data Sheet A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A3I35D025WN.pdf English documents 711766 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3I35D025WN.pdf A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I35D025WN.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet 711.8 KB A3I35D025WN N 1528772875293722930243 Package Information 2 /docs/en/package-information/98ASA00583D.pdf 2016-10-31 1427423269558736551615 PSP 3 Jan 22, 2016 Package Information 98ASA00583D, TO-270WB-17 None /docs/en/package-information/98ASA00583D.pdf English documents 86910 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00583D.pdf 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins /docs/en/package-information/98ASA00583D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins 86.9 KB SOT1730-1 N 1427423269558736551615 /docs/en/package-information/98ASA00729D.pdf 2016-10-31 1427423270227715980928 PSP 4 Jan 18, 2016 Package Information 98ASA00729D, TO-270WBG-17 None /docs/en/package-information/98ASA00729D.pdf English documents 87977 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00729D.pdf 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins /docs/en/package-information/98ASA00729D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins 88.0 KB SOT1730-2 N 1427423270227715980928 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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