A3I35D025WN Product Information|NXP

Features


Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V

Package


FM17F: FM17F, plastic, flange mount flat package; 17 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

Buy Options

Operating Features

No information available

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A3I35D025WNR1(935373852528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
1565.9

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
A3I35D025WNR1
(935373852528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A3I35D025WNR1
(935373852528)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3I35D025WNR1
(935373852528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A3I35D025WN

The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.