Design Files
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1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, 2xW-CDMA RF Power LDMOS Transistors
- This page contains information on a product that is not recommended for new designs.
The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
TO-270-2, TO-270G-2 Package Image
Product Details
Features
- Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
- Power Gain: 15.5 dB
- Drain Efficiency: 36%
- IMD: –34 dBc
- Typical 2-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
- Power Gain: 15.5 dB
- Drain Efficiency: 15%
- IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth
- ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
- Typical Single-Carrier N-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (1930-1990 MHz),IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain: 15.5 dB
- Drain Efficiency: 16%
- ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth
- Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg., Full Frequency Band (1805-1880 MHz)
- Power Gain: 16 dB
- Drain Efficiency: 33%
- EVM: 1.3% rms
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Part numbers include: MMRF1004GN, MMRF1004N.
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Documentation
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