MMRF1004N|1600-2200 MHz, 10 W, 28 V | NXP Semiconductors

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1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, 2xW-CDMA RF Power LDMOS Transistors

MMRF1004N Active
  • This page contains information on a product that is not recommended for new designs.
The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

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Product Details

Features

  • Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
    Power Gain: 15.5 dB
    Drain Efficiency: 36%
    IMD: –34 dBc
  • Typical 2-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
    Power Gain: 15.5 dB
    Drain Efficiency: 15%
    IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
  • Typical Single-Carrier N-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (1930-1990 MHz),IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.5 dB
    Drain Efficiency: 16%
    ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth
  • Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg., Full Frequency Band (1805-1880 MHz)
    Power Gain: 16 dB
    Drain Efficiency: 33%
    EVM: 1.3% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

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N true 0 PSPMMRF1004Nen 7 Application Note Application Note t789 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. 1387488686742727876964 PSP 888.5 KB None None documents None 1387488686742727876964 /docs/en/data-sheet/MMRF1004N.pdf 888470 /docs/en/data-sheet/MMRF1004N.pdf MMRF1004N documents N N 2016-10-31 MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1004N.pdf /docs/en/data-sheet/MMRF1004N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 21, 2014 980000996212993340 Data Sheet Y N MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet Application Note Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Technical Notes Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 6 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 7 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 MMRF1004N downloads en true 1 Y PSP Application Note 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 Data Sheet 1 /docs/en/data-sheet/MMRF1004N.pdf 2016-10-31 1387488686742727876964 PSP 1 Jan 21, 2014 Data Sheet The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. None /docs/en/data-sheet/MMRF1004N.pdf English documents 888470 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1004N.pdf MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1004N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet 888.5 KB MMRF1004N N 1387488686742727876964 Package Information 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 6 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 7 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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