MRF6V12500H|500 W Pulse, 960-1215 MHz, 50 V | NXP Semiconductors

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960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

MRF6V12500H Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.

See product image

Product Details

Features

  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA
Application Signal Type Pout(1)
(W)		 Freq.
(MHz)		 Gps
(dB)		 ηD
(%)
Narrowband
Short Pulse		Pulse
(128 µsec, 10% Duty Cycle)		500 Peak103019.762.0
Narrowband
Mode S ELM		Pulse
(48 x (32 µsec on, 18 µsec off),
Period 2.4 msec,
6.4% Long-term Duty Cycle)		500 Peak103019.762.0
BroadbandPulse
(128 µsec, 10% Duty Cycle)		500 Peak960-121518.557.0
1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

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N true 0 PSPMRF6V12500Hen 9 Application Note Application Note t789 2 Brochure Brochure t518 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 3 Technical Notes Technical Notes t521 1 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 1 1 6 English RF power transistors designed for applications operating at frequencies between 960 and 1215 MHz. Suitable for use in pulsed applications. 1252962323792707178900 PSP 2.8 MB None None documents None 1252962323792707178900 /docs/en/data-sheet/MRF6V12500H.pdf 2835607 /docs/en/data-sheet/MRF6V12500H.pdf MRF6V12500H documents N N 2016-10-31 MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet /docs/en/data-sheet/MRF6V12500H.pdf /docs/en/data-sheet/MRF6V12500H.pdf Data Sheet N 980000996212993340 2025-01-06 pdf N en Dec 2, 2024 980000996212993340 Data Sheet Y N MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Brochure Brochure 1 4 2 English Comprehensive portfolio of RF power transistors for commercial aerospace applications. 1243895030259713217473 PSP 1.9 MB None None documents None 1243895030259713217473 /docs/en/brochure/BR1608.pdf 1872765 /docs/en/brochure/BR1608.pdf BR1608 documents N N 2016-10-31 RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf /docs/en/brochure/BR1608.pdf Brochure N 712453003803778552 2024-03-13 pdf N en Sep 4, 2015 712453003803778552 Brochure Y N RF Solutions for Commercial Aerospace Technical Notes Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 3 6 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 7 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 8 C English 1383674832427729566041 PSP 46.9 KB None None documents None 1383674832427729566041 /docs/en/package-information/98ASA00193D.pdf 46883 /docs/en/package-information/98ASA00193D.pdf SOT1802-1 documents N N 2016-10-31 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins /docs/en/package-information/98ASA00193D.pdf /docs/en/package-information/98ASA00193D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins White Paper White Paper 1 9 4 English In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. 1221085238616699797555 PSP 965.1 KB None None documents None 1221085238616699797555 /docs/en/white-paper/50VRFLDMOSWP.pdf 965097 /docs/en/white-paper/50VRFLDMOSWP.pdf 50VRFLDMOSWP documents N N 2016-10-31 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf /docs/en/white-paper/50VRFLDMOSWP.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Sep 8, 2011 918633085541740938 White Paper Y N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications false 0 MRF6V12500H downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Brochure 1 /docs/en/brochure/BR1608.pdf 2016-10-31 1243895030259713217473 PSP 4 Sep 4, 2015 Brochure Comprehensive portfolio of RF power transistors for commercial aerospace applications. None /docs/en/brochure/BR1608.pdf English documents 1872765 None 712453003803778552 2024-03-13 N /docs/en/brochure/BR1608.pdf RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf documents 712453003803778552 Brochure N en None Y pdf 2 N N RF Solutions for Commercial Aerospace 1.9 MB BR1608 N 1243895030259713217473 Data Sheet 1 /docs/en/data-sheet/MRF6V12500H.pdf 2016-10-31 1252962323792707178900 PSP 1 Dec 2, 2024 Data Sheet RF power transistors designed for applications operating at frequencies between 960 and 1215 MHz. Suitable for use in pulsed applications. None /docs/en/data-sheet/MRF6V12500H.pdf English documents 2835607 None 980000996212993340 2025-01-06 N /docs/en/data-sheet/MRF6V12500H.pdf MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet /docs/en/data-sheet/MRF6V12500H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 6 N N MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet 2.8 MB MRF6V12500H N 1252962323792707178900 Package Information 3 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 6 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 7 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 /docs/en/package-information/98ASA00193D.pdf 2016-10-31 1383674832427729566041 PSP 8 Feb 26, 2016 Package Information None /docs/en/package-information/98ASA00193D.pdf English documents 46883 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00193D.pdf 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins /docs/en/package-information/98ASA00193D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins 46.9 KB SOT1802-1 N 1383674832427729566041 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 White Paper 1 /docs/en/white-paper/50VRFLDMOSWP.pdf 2016-10-31 1221085238616699797555 PSP 9 Sep 8, 2011 White Paper In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. None /docs/en/white-paper/50VRFLDMOSWP.pdf English documents 965097 None 918633085541740938 2022-12-07 N /docs/en/white-paper/50VRFLDMOSWP.pdf 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf documents 918633085541740938 White Paper N en None Y pdf 4 N N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications 965.1 KB 50VRFLDMOSWP N 1221085238616699797555 true Y Products

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