MRF6V12250H|275 W Pulse, 960-1215 MHz, 50 V

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MRF6V12250H

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.

See product image

Data Sheet

Application Notes

Product Details

Features

Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20.3 dB
Drain Efficiency: 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power
Typical Broadband Performance: V_DD = 50 Volts, I_DQ = 100 mA, Pout = 250 Watts Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 19.8 dB
Drain Efficiency: 58%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Part numbers include: MRF6V12250H, MRF6V12250HS.

Buy/Parametrics

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Documentation

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1-5 of 7 documents

^{Data Sheet}
MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

PDFRev 2Apr 28, 20101.3 MBMRF6V12250HEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^Brochure
RF Solutions for Commercial Aerospace

PDFRev 2Sep 4, 20151.9 MBBR1608English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDFRev HMar 22, 201644.1 KBSOT1792-1English
^{Package Information}
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDFRev JMar 22, 201643.5 KBSOT1793-1English
^{White Paper}
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

PDFRev 4Sep 8, 2011965.1 KB50VRFLDMOSWPEnglish

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Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MRF6V12250H, MRF6V12250HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00334.5 KBMRF6V12250H_MDL_ADS
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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MRF6V12250H, MRF6V12250HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:00739.2 KBMRF6V12250H_MDL_AWR
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^Calculators
MRF6V12250HR3, MRF6V12250HSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 2010 00:00:0041.0 KBMRF6V12250H_MTTF_CALC
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960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

RF Solutions for Commercial Aerospace

Using Data Sheet Impedances for RF LDMOS Devices

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

Design Resources

Design Files

Filter by

MRF6V12250H, MRF6V12250HS RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6V12250H, MRF6V12250HS RF High-Power Model AWR Product Model Design Kit

MRF6V12250HR3, MRF6V12250HSR3 RF Power Electromigration MTTF Calculation Program

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