MRF13750H|750 W CW over 700-1300 MHz, 50 V | NXP Semiconductors

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750 W CW over 700-1300 MHz, 50 V RF Power LDMOS Transistor

MRF13750H Active

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These 750 W CW transistors, MRF13750H and MRF13750HS, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation.

Block Diagram

MRF13750H 915 MHz Reference Circuit

MRF13750H 915 MHz Reference Circuit
Get diagram PDF

Features

  • Internally input pre-matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Characterized for 30 to 50 V
  • Suitable for linear applications with appropriate biasing
  • Integrated ESD protection
  • Recommended driver: MRFE6VS25GN (25 W)
  • RoHS compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
915 (1)CW75019.367.1
915 (2)Pulse
(100 µsec, 10% Duty Cycle)		85020.569.2
1300 (3)CW70017.256.0

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
915 (2) Pulse
(100 µsec, 10% Duty Cycle)		 > 10:1 at all Phase Angles 15.9 Peak
(3 dB Overdrive)		 50 No Device Degradation
1. Measured in 915 MHz narrowband reference circuit.
2. Measured in 915 MHz narrowband production test fixture.
3. Measured in 1300 MHz narrowband reference circuit.

Buy/Parametrics

4 results

Include 0 NRND

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Status

MRF13750H
Data Sheet

Active

MRF13750H-1300
Data Sheet

Active

MRF13750H-915MHZ
Data Sheet

Active

MRF13750HS
Data Sheet

Active

N true 0 PSPMRF13750Hen 5 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English MRF13750H 750 W CW over 700-1300 MHz, 50 V RF power transistor designed for use in industrial, scientific and medical applications 1514078511764715130603 PSP 512.1 KB None None documents None 1514078511764715130603 /docs/en/data-sheet/MRF13750H.pdf 512111 /docs/en/data-sheet/MRF13750H.pdf MRF13750H documents N N 2017-12-23 MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF13750H.pdf /docs/en/data-sheet/MRF13750H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Jan 19, 2018 980000996212993340 Data Sheet Y N MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 4 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRF13750H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/MRF13750H.pdf 2017-12-23 1514078511764715130603 PSP 1 Jan 19, 2018 Data Sheet MRF13750H 750 W CW over 700-1300 MHz, 50 V RF power transistor designed for use in industrial, scientific and medical applications None /docs/en/data-sheet/MRF13750H.pdf English documents 512111 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MRF13750H.pdf MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF13750H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet 512.1 KB MRF13750H N 1514078511764715130603 Package Information 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 4 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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