MRF1K50H|1500 W CW, 1.8-500 MHz, 50 V | NXP Semiconductors

1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

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Product Details

Features

  • High Drain-source Avalanche Energy Absorption Capability
  • Unmatched Input and Output
  • Device Can Be Used Single-Ended or in a Push-Pull Configuration
  • Characterized from 30 to 50 V
  • High Rugggedness. Handles 65:1 VSWR.
  • RoHS Compliant
  • Recommended Driver: MRFE6VS25N (25 W)
  • Lower Thermal Resistance Part Available: MRF1K50N
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
230(4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.

Buy/Parametrics










































































































N true 0 PSPMRF1K50Hen 6 Application Note Application Note t789 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 1 1 1.1 English MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1466819766532707018832 PSP 1.1 MB None None documents None 1466819766532707018832 /docs/en/data-sheet/MRF1K50H.pdf 1123487 /docs/en/data-sheet/MRF1K50H.pdf MRF1K50H documents N N 2017-01-12 MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50H.pdf /docs/en/data-sheet/MRF1K50H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 10, 2017 980000996212993340 Data Sheet Y N MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet Application Note Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 4 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Package Information Package Information 1 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins White Paper White Paper 1 6 1 English NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. 1486618696473728474245 PSP 414.0 KB None None documents None 1486618696473728474245 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 413950 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf rf-energy-in-medicine-white-paper documents N N 2017-02-08 RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Oct 19, 2017 918633085541740938 White Paper Y N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power false 0 MRF1K50H downloads en true 1 Y PSP Application Note 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 4 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/MRF1K50H.pdf 2017-01-12 1466819766532707018832 PSP 1 Mar 10, 2017 Data Sheet MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRF1K50H.pdf English documents 1123487 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF1K50H.pdf MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1.1 N N MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet 1.1 MB MRF1K50H N 1466819766532707018832 Package Information 1 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 White Paper 1 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 2017-02-08 1486618696473728474245 PSP 6 Oct 19, 2017 White Paper NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. None /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf English documents 413950 None 918633085541740938 2022-12-07 N /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf documents 918633085541740938 White Paper N en None Y pdf 1 N N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power 414.0 KB rf-energy-in-medicine-white-paper N 1486618696473728474245 true Y Products

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