MW6S010N|450-1500 MHz, 10 W, 28 V | NXP Semiconductors

Automotive

Industrial

Consumer

Technologies

450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

MW6S010N Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
The MW6S010NR1 and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

See product image

Product Details

Features

  • Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP
    Power Gain: 18 dB
    Drain Efficiency: 32%
    IMD: –37 dBc
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Buy/Parametrics

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPMW6S010Nen 6 Application Note Application Note t789 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 en_US en_US en Data Sheet Data Sheet 1 1 5 English The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 1151013916791725303927 PSP 742.7 KB None None documents None 1151013916791725303927 /docs/en/data-sheet/MW6S010N.pdf 742730 /docs/en/data-sheet/MW6S010N.pdf MW6S010N documents N N 2016-10-31 MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MW6S010N.pdf /docs/en/data-sheet/MW6S010N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 19, 2009 980000996212993340 Data Sheet Y N MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Application Note Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Package Information Package Information 2 5 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 6 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 MW6S010N downloads en true 1 Y PSP Application Note 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 Data Sheet 1 /docs/en/data-sheet/MW6S010N.pdf 2016-10-31 1151013916791725303927 PSP 1 Jun 19, 2009 Data Sheet The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. None /docs/en/data-sheet/MW6S010N.pdf English documents 742730 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MW6S010N.pdf MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MW6S010N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 5 N N MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 742.7 KB MW6S010N N 1151013916791725303927 Package Information 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 5 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 6 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 true Y Products

Documentation

Quick reference to our documentation types.

Filters

6 documents

Compact List

Application Note (3)
Data Sheet (1)
Package Information (2)

Design Files

Quick reference to our design files types.
Filters

4 design files

Support

What do you need help with?

  • Narrow your search
Search