MW6S010N|450-1500 MHz, 10 W, 28 V

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MW6S010N

The MW6S010NR1 and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

See product image

Data Sheet

Application Notes

Product Details

Features

Typical Two-Tone Performance @ 960 MHz, V_DD = 28 Volts, I_DQ = 125 mA, Pout = 10 Watts PEP

Power Gain: 18 dB

Drain Efficiency: 32%

IMD: –37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Part numbers include: MW6S010GN, MW6S010N.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 6 documents

^{Data Sheet}
MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

PDFRev 5Jun 19, 2009742.7 KBMW6S010NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Package Information}
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

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Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MW6S010N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:00454.8 KBMW6S010N_MDL_AWR
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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MW6S010N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00231.5 KBMW6S010N_MDL_ADS
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^Calculators
MW6S010N RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 1, 2007 00:00:0033.8 KBMW6S010N_MTTF_CALC
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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

Filter by

MW6S010N RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MW6S010N RF High-Power Model ADS Product Model Design Kit

MW6S010N RF Power Electromigration MTTF Calculation Program

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