MRFE6S9060N|470-960 MHz, 14 W, 28 V LDMOS

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MRFE6S9060NR1

The MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

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Data Sheet

Application Notes

Product Details

Features

Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD = 28 Volts, I_DQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 21.1 dB

Drain Efficiency: 33%

ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application

Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz)

Power Gain: 20 dB

Drain Efficiency: 46%

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –78 dBc

EVM: 1.5% rms

GSM Application

Typical GSM Performance: V_DD = 28 Volts, I_DQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz)

Power Gain: 20 dB

Drain Efficiency: 63%
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

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Documentation

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1-5 of 6 documents

^{Data Sheet}
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

PDFRev 1Oct 19, 2007589.9 KBMRFE6S9060NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^Brochure
Broadcast Solutions

PDFRev 5Sep 8, 2011818.6 KBBR1607English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

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Design Resources

Design Files

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3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MRFE6S9060N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00178.7 KBMRFE6S9060N_MDL_ADS
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^Calculators
MRFE6S9060NR1 RF Power Electromigration MTTF Calculation Program

XLSRev 0Oct 2, 2007 00:00:0043.5 KBMRFE6S9060N_MTTF_CALC
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470-960 MHz, 14 W Avg., 28 V, Broadband RF Power LDMOS Transistor

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Broadcast Solutions

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MRFE6S9060N RF High-Power Model ADS Product Model Design Kit

MRFE6S9060NR1 RF Power Electromigration MTTF Calculation Program

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