MRFX1K80H|1800 W CW, 1.8-400 MHz, 65 V | NXP Semiconductors

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1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX1K80H Active

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The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

Features

  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • Lower thermal resistance option in over-molded plastic package: MRFX1K80N
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

RF Performance Tables

Typical Performance

Frequency
(MHz)		 Signal Type VDD
(V)		 Pout
(W)		 Gps
(dB)		 ηD
(%)		 Reference Circuit
Part Number
27 CW 65 1800 CW 27.8 75.6 MRFX1K80H-27MHZ
64 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 MRFX1K80H-64MHZ
81.36 CW 62 1800 CW 25.1 78.7 MRFX1K80H-81MHZ
87.5-108 CW 60 1600 CW 23.6 82.5 MRFX1K80H-88MHZ
123/128 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0 MRFX1K80H-128MHZ
175 CW 60 1560 CW 23.5 75.9 MRFX1K80H-175MHZ
174-230 DohertyDVB-T (8k OFDM) 63 250 Avg. 21.3 43.3 MRFX1K80H-VHFDHY
230Pulse (100 µsec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1 MRFX1K80H-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test Voltage Result
230 Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 14 W Peak
(3 dB Overdrive)		 65 No Device Degradation

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MRFX1K80H-128MHZ
Data Sheet

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MRFX1K80H-175MHZ
Data Sheet

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MRFX1K80H-230MHZ
Data Sheet

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MRFX1K80H-27MHZ
Data Sheet

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MRFX1K80H-64MHZ
Data Sheet

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MRFX1K80H-81MHZ
Data Sheet

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MRFX1K80H-88MHZ
Data Sheet

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MRFX1K80H-VHFDHY
Data Sheet

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N true 0 PSPMRFX1K80Hen 5 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English MRFX1K80H 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1504029214784719618290 PSP 1.2 MB None None documents None 1504029214784719618290 /docs/en/data-sheet/MRFX1K80H.pdf 1228319 /docs/en/data-sheet/MRFX1K80H.pdf MRFX1K80H documents N N 2017-08-29 MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80H.pdf /docs/en/data-sheet/MRFX1K80H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet Application Note Application Note 2 2 0 English This application note uses the 1800 W, 65 V MRFX1K80H LDMOS transistor comparing its linear model simulation results with measured circuit results. 1521171792590725237835 PSP 303.6 KB None None documents None 1521171792590725237835 /docs/en/application-note/AN12070.pdf 303620 /docs/en/application-note/AN12070.pdf AN12070 documents N N 2018-03-15 AN12070 - Using a Linear Transistor Model for RF Amplifier Design /docs/en/application-note/AN12070.pdf /docs/en/application-note/AN12070.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Mar 13, 2018 645036621402383989 Application Note Y N AN12070 - Using a Linear Transistor Model for RF Amplifier Design 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRFX1K80H downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN12070.pdf 2018-03-15 1521171792590725237835 PSP 2 Mar 13, 2018 Application Note This application note uses the 1800 W, 65 V MRFX1K80H LDMOS transistor comparing its linear model simulation results with measured circuit results. None /docs/en/application-note/AN12070.pdf English documents 303620 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN12070.pdf AN12070 - Using a Linear Transistor Model for RF Amplifier Design /docs/en/application-note/AN12070.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N AN12070 - Using a Linear Transistor Model for RF Amplifier Design 303.6 KB AN12070 N 1521171792590725237835 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/MRFX1K80H.pdf 2017-08-29 1504029214784719618290 PSP 1 Sep 26, 2018 Data Sheet MRFX1K80H 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRFX1K80H.pdf English documents 1228319 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX1K80H.pdf MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet 1.2 MB MRFX1K80H N 1504029214784719618290 Package Information 1 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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