MRF101AN|100 W CW, 1.8-250 MHz, 50 V | NXP Semiconductors

100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

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Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
Reference Circuit
Part Number
Detailed Data
13.56CW130 CW27.179.6MRF101AN-13MHZTool Summary Page
27CW125 CW24.979.6MRF101AN-27MHZ
40.68CW120 CW23.881.5MRF101AN-40MHZ
50CW119 CW22.882.1MRF101AN-50MHZ
81.36CW130 CW23.280.8MRF101AN-81MHZ
87.5-108CW115 CW20.676.8MRF101AN-88MHZ
136-174CW104 CW21.276.5MRF101AN-VHF
230Pulse
(100 µsec, 20% Duty Cycle)
115 Peak21.176.7MRF101AN-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
40.68CW> 65:1
at all Phase Angles
0.64 CW50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1
at all Phase Angles
1.8 Peak
(3 dB Overdrive)
50No Device Degradation

Buy/Parametrics










































































































N true 0 PSPMRF101ANen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 Japanese MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635ja PSP 856.2 KB None None documents None 1543555071358745152635 /docs/ja/data-sheet/MRF101AN.pdf 856202 /docs/ja/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/ja/data-sheet/MRF101AN.pdf /docs/ja/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 ja May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 1 English MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635 PSP 856.2 KB None None documents None 1543555071358745152635 /docs/en/data-sheet/MRF101AN.pdf 856202 /docs/en/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF101AN.pdf /docs/en/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 A English TO-220-3, 98ASA01106D 1540565611197725645914 PSP 180.3 KB None None documents None 1540565611197725645914 /docs/en/package-information/SOT1937-1.pdf 180279 /docs/en/package-information/SOT1937-1.pdf sot1937-1 documents N N 2018-10-26 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf /docs/en/package-information/SOT1937-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 13, 2019 302435339416912908 Package Information Y N 98ASA01106D, TO-220-3 false 0 MRF101AN downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF101AN.pdf 2018-11-29 1543555071358745152635 PSP 1 May 14, 2019 Data Sheet MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package None /docs/en/data-sheet/MRF101AN.pdf English documents 856202 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF101AN.pdf MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF101AN.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 856.2 KB MRF101AN N 1543555071358745152635 Package Information 1 /docs/en/package-information/SOT1937-1.pdf 2018-10-26 1540565611197725645914 PSP 3 Feb 13, 2019 Package Information TO-220-3, 98ASA01106D None /docs/en/package-information/SOT1937-1.pdf English documents 180279 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1937-1.pdf 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N 98ASA01106D, TO-220-3 180.3 KB sot1937-1 N 1540565611197725645914 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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