MRF300AN|300 W CW, 1.8-250 MHz, 50 V | NXP Semiconductors

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300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF300AN Active

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These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
13.56CW320 CW28.179.7
27330 CW27.480.0
40.68330 CW28.279.0
50320 CW27.373.0
81.36325 CW25.177.5
144320 CW23.073.0
230Pulse
(100 µsec, 20% Duty Cycle)		330 Peak20.475.5

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
40.68Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles2 Peak
(3 dB Overdrive)		50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles6 Peak
(3 dB Overdrive)		50No Device Degradation

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MRF300AN-13MHZ
Data Sheet

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MRF300AN-144MHZ
Data Sheet

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MRF300AN-230MHZ
Data Sheet

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MRF300AN-50MHZ
Data Sheet

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MRF300AN-81MHZ
Data Sheet

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N true 0 PSPMRF300ANen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English MRF300AN, MRF300BN 300 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-247-3 package 1527901608798728352826 PSP 1.3 MB None None documents None 1527901608798728352826 /docs/en/data-sheet/MRF300AN.pdf 1313604 /docs/en/data-sheet/MRF300AN.pdf MRF300AN documents N N 2018-06-01 MRF300AN, MRF300BN 300 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF300AN.pdf /docs/en/data-sheet/MRF300AN.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 28, 2019 980000996212993340 Data Sheet Y N MRF300AN, MRF300BN 300 W CW, 1.8-250 MHz, 50 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 A English TO-247-3, 98ASA01082D, SOT1930-1 1531135258266700861459 PSP 186.4 KB None None documents None 1531135258266700861459 /docs/en/package-information/SOT1930-1.pdf 186374 /docs/en/package-information/SOT1930-1.pdf sot1930-1 documents N N 2018-07-09 TO-247-3, 98ASA01082D /docs/en/package-information/SOT1930-1.pdf /docs/en/package-information/SOT1930-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 13, 2019 302435339416912908 Package Information Y N TO-247-3, 98ASA01082D false 0 MRF300AN downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF300AN.pdf 2018-06-01 1527901608798728352826 PSP 1 Jun 28, 2019 Data Sheet MRF300AN, MRF300BN 300 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-247-3 package None /docs/en/data-sheet/MRF300AN.pdf English documents 1313604 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF300AN.pdf MRF300AN, MRF300BN 300 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF300AN.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MRF300AN, MRF300BN 300 W CW, 1.8-250 MHz, 50 V Data Sheet 1.3 MB MRF300AN N 1527901608798728352826 Package Information 1 /docs/en/package-information/SOT1930-1.pdf 2018-07-09 1531135258266700861459 PSP 3 Feb 13, 2019 Package Information TO-247-3, 98ASA01082D, SOT1930-1 None /docs/en/package-information/SOT1930-1.pdf English documents 186374 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1930-1.pdf TO-247-3, 98ASA01082D /docs/en/package-information/SOT1930-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N TO-247-3, 98ASA01082D 186.4 KB sot1930-1 N 1531135258266700861459 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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