AFT09MS007N|7 W CW, 136-941 MHz, 7.5 V

Product Details

Features

Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7-inch Reel.

Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700-800 MHz Handheld Radio

RF Performance Tables

870 MHz Narrowband

(7.5 Vdc, I_DQ = 100 mA, T_A = 25°C, CW)

Frequency (MHz)	G_ps (dB)	η_D (%)	Pout (W)
870	15.2	71.0	7.3

Wideband Performance

(7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	Pin (W)	G_ps (dB)	η_D (%)	Pout (W)
136-174	0.25	14.6	69.0	7.2
350-470	0.20	15.6	60.9	7.3
450-520	0.22	15.4	56.0	7.5
760-860	0.23	15.1	48.1	7.5

Ruggedness, 870 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
870	CW	> 65:1 at all Phase Angles	0.4 (3 dB Overdrive)	10.8	No Device Degradation

Buy/Parametrics

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N true 0 PSPAFT09MS007Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1

1

English

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

1370532209020737217750 PSP

1.4 MB

None

documents

None

1370532209020737217750

/docs/en/data-sheet/AFT09MS007N.pdf

1356586

/docs/en/data-sheet/AFT09MS007N.pdf

AFT09MS007N

documents

N

2016-10-31

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

/docs/en/data-sheet/AFT09MS007N.pdf /docs/en/data-sheet/AFT09MS007N.pdf

Data Sheet

N

980000996212993340

2022-12-07

pdf N

en

Apr 21, 2014

980000996212993340

Data Sheet

Y

N

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

Application Note Application Note 1 2

0

English

Simple method for extending the bandwidth of a 450 to 520 MHz UHF circuit to 350 to 470 MHz for the AFT09MS007N device.

1409323270949718015815 PSP

949.9 KB

None

documents

None

1409323270949718015815

/docs/en/application-note/AN4859.pdf

949926

/docs/en/application-note/AN4859.pdf

AN4859

documents

N

2016-10-31

How to Extend Bandwidth AFT09MS007N Application Note

/docs/en/application-note/AN4859.pdf /docs/en/application-note/AN4859.pdf

Application Note

N

645036621402383989

2022-12-07

pdf N

en

Aug 26, 2014

645036621402383989

Application Note

Y

N

How to Extend Bandwidth AFT09MS007N Application Note

Technical Notes Technical Notes 1 3

0

English

This document explains the format used by NXP<sup>®</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

None

documents

None

1074535848819727693421

/docs/en/engineering-bulletin/EB212.pdf

170979

/docs/en/engineering-bulletin/EB212.pdf

EB212

documents

N

2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf

Technical Notes

N

389245547230346745

2024-09-13

pdf N

en

Jan 19, 2004

389245547230346745

Technical Notes

Y

N

Using Data Sheet Impedances for RF LDMOS Devices

Package Information Package Information 1 4

A

English

1370451903375708697913 PSP

55.3 KB

None

documents

None

1370451903375708697913

/docs/en/package-information/98ASA00476D.pdf

55307

/docs/en/package-information/98ASA00476D.pdf

SOT1811-2

documents

N

2016-10-31

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

/docs/en/package-information/98ASA00476D.pdf /docs/en/package-information/98ASA00476D.pdf

Package Information

N

302435339416912908

2022-12-07

pdf N

en

Feb 15, 2016

302435339416912908

Package Information

D

N

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

false 0 AFT09MS007N downloads en true 1 Y PSP Application Note

1

/docs/en/application-note/AN4859.pdf

2016-10-31

1409323270949718015815 PSP 2

Aug 26, 2014

Application Note

Simple method for extending the bandwidth of a 450 to 520 MHz UHF circuit to 350 to 470 MHz for the AFT09MS007N device.

None

/docs/en/application-note/AN4859.pdf

English

documents

949926

None

645036621402383989

2022-12-07

N

/docs/en/application-note/AN4859.pdf

How to Extend Bandwidth AFT09MS007N Application Note

/docs/en/application-note/AN4859.pdf

documents

645036621402383989

Application Note

N

en

None

Y

pdf

0

N

How to Extend Bandwidth AFT09MS007N Application Note

949.9 KB

AN4859

N

1409323270949718015815

Data Sheet

1

/docs/en/data-sheet/AFT09MS007N.pdf

2016-10-31

1370532209020737217750 PSP 1

Apr 21, 2014

Data Sheet

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

None

/docs/en/data-sheet/AFT09MS007N.pdf

English

documents

1356586

None

980000996212993340

2022-12-07

N

/docs/en/data-sheet/AFT09MS007N.pdf

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

/docs/en/data-sheet/AFT09MS007N.pdf

documents

980000996212993340

Data Sheet

N

en

None

Y

pdf

1

N

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

1.4 MB

AFT09MS007N

N

1370532209020737217750

Package Information

1

/docs/en/package-information/98ASA00476D.pdf

2016-10-31

1370451903375708697913 PSP 4

Feb 15, 2016

Package Information

None

/docs/en/package-information/98ASA00476D.pdf

English

documents

55307

None

302435339416912908

2022-12-07

N

/docs/en/package-information/98ASA00476D.pdf

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

/docs/en/package-information/98ASA00476D.pdf

documents

302435339416912908

Package Information

N

en

None

D

pdf

A

N

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

55.3 KB

SOT1811-2

N

1370451903375708697913

Technical Notes

1

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 3

Jan 19, 2004

Technical Notes

This document explains the format used by NXP<sup>®</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

N

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

N

en

None

Y

pdf

0

N

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

N

1074535848819727693421

true Y Products

Documentation

Quick reference to our documentation types.

4 documents

Compact List

How to Extend Bandwidth AFT09MS007N Application Note[AN4859]

PDFAug 26, 2014Rev 0

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet[AFT09MS007N]

PDFApr 21, 2014Rev 1

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins[SOT1811-2]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

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AFT09MS007N S-Parameters

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AFT09MS007N RF High-Power Model AWR Product Model Design Kit

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AFT09MS007N 870 MHz Narrowband PCB DXF file

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AFT09MS007N 760-870 MHz PCB DXF file

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AFT09MS007N 350-470 MHz PCB DXF file

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Calculators
AFT09MS007NT1 RF Power Electromigration MTTF Calculation Program

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1-5of 10 design files

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RF High Power Model ADS Model Kit goto: Click the Download button to select.

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AFT09MS007N S-Parameters

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AFT09MS007N RF High-Power Model AWR Product Model Design Kit

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AFT09MS007N RF High-Power Model ADS Product Model Design Kit

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AFT09MS007N 870 MHz Narrowband PCB DXF file

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AFT09MS007N 450-520 MHz PCB DXF file

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AFT09MS007N 760-870 MHz PCB DXF file

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AFT09MS007N 350-470 MHz PCB DXF file

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Calculators
AFT09MS007NT1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jun 5, 2013 00:00:0032.2 KBAFT09MS007N_MTTF_CALC

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136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

870 MHz Narrowband

Wideband Performance

Ruggedness, 870 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

How to Extend Bandwidth AFT09MS007N Application Note[AN4859]

Data Sheet (1)

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet[AFT09MS007N]

Package Information (1)

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins[SOT1811-2]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

How to Extend Bandwidth AFT09MS007N Application Note[AN4859]

Data Sheet (1)

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet[AFT09MS007N]

Package Information (1)

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins[SOT1811-2]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT09MS007N S-Parameters

AFT09MS007N RF High-Power Model AWR Product Model Design Kit

AFT09MS007N RF High-Power Model ADS Product Model Design Kit

AFT09MS007N 870 MHz Narrowband PCB DXF file

AFT09MS007N 450-520 MHz PCB DXF file

AFT09MS007N 760-870 MHz PCB DXF file

AFT09MS007N 350-470 MHz PCB DXF file

AFT09MS007NT1 RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT09MS007N S-Parameters

AFT09MS007N RF High-Power Model AWR Product Model Design Kit

AFT09MS007N RF High-Power Model ADS Product Model Design Kit

AFT09MS007N 870 MHz Narrowband PCB DXF file

AFT09MS007N 450-520 MHz PCB DXF file

AFT09MS007N 760-870 MHz PCB DXF file

AFT09MS007N 350-470 MHz PCB DXF file

AFT09MS007NT1 RF Power Electromigration MTTF Calculation Program

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