MHT2012N|2450 MHz, 12.5 W CW, 28 V

Product Details

Features

High gain simplifies layout and reduced PCB area compared to a discrete design
Qualified up to a maximum of 32 V_DD operation
On-chip input and interstage matching (50 ohm input)
Integrated quiescent current temperature compensation with enable/disable function
Integrated ESD protection
150°C case and junction temperature ratinge
Ideal as a driver for high power RF energy applications
RoHS compliant

Driver for consumer and commercial cooking applications
Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
Driver for medical applications, such as microwave ablation, renal denervation and diathermy
Final stage for portable heating devices and portable medical systems

RF Performance Table

Typical Performance

V_DD = 28 Vdc, P_in = 11 dBm, I_DQ1 = 15 mA, I_DQ2 = 75 mA

Frequency (MHz)	Signal Type	G_ps (dB)	PAE (%)	P_out (W)
2400	CW	30.1	51.3	13.0
2450		30.0	51.4	12.7
2500		29.7	50.5	11.7

Buy/Parametrics

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N true 0 PSPMHT2012Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1

0

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MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band

1531470347639707726269 PSP

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documents

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2018-07-13

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

/docs/en/data-sheet/MHT2012N.pdf /docs/en/data-sheet/MHT2012N.pdf

Data Sheet

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980000996212993340

2023-08-24

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Jul 12, 2018

980000996212993340

Data Sheet

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MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

Application Note Application Note 1 2

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I989356375600 PSP

910.7 KB

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/docs/en/application-note/AN1907.pdf

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AN1907

documents

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2016-11-09

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

/docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf

Application Note

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645036621402383989

2025-01-28

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en

May 13, 2009

645036621402383989

Application Note

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AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Technical Notes Technical Notes 1 3

0

English

This document explains the format used by NXP<sup>®</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

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EB212

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N

2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf

Technical Notes

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389245547230346745

2024-09-13

pdf N

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Jan 19, 2004

389245547230346745

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Using Data Sheet Impedances for RF LDMOS Devices

Package Information Package Information 1 4

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1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8)

1159978986098697260288 PSP

44.4 KB

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2016-10-31

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

/docs/en/package-information/98ASA10760D.pdf /docs/en/package-information/98ASA10760D.pdf

Package Information

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302435339416912908

2022-12-07

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Mar 21, 2016

302435339416912908

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98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

false 0 MHT2012N downloads en true 1 Y PSP Application Note

1

/docs/en/application-note/AN1907.pdf

2016-11-09

I989356375600 PSP 2

May 13, 2009

Application Note

None

/docs/en/application-note/AN1907.pdf

English

documents

910737

None

645036621402383989

2025-01-28

N

/docs/en/application-note/AN1907.pdf

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

/docs/en/application-note/AN1907.pdf

documents

645036621402383989

Application Note

N

en

None

Y

pdf

3

N

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

910.7 KB

AN1907

N

I989356375600

Data Sheet

1

/docs/en/data-sheet/MHT2012N.pdf

2018-07-13

1531470347639707726269 PSP 1

Jul 12, 2018

Data Sheet

MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band

None

/docs/en/data-sheet/MHT2012N.pdf

English

documents

444629

None

980000996212993340

2023-08-24

N

/docs/en/data-sheet/MHT2012N.pdf

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

/docs/en/data-sheet/MHT2012N.pdf

documents

980000996212993340

Data Sheet

N

en

None

Y

pdf

0

N

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

444.6 KB

MHT2012N

N

1531470347639707726269

Package Information

1

/docs/en/package-information/98ASA10760D.pdf

2016-10-31

1159978986098697260288 PSP 4

Mar 21, 2016

Package Information

1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8)

None

/docs/en/package-information/98ASA10760D.pdf

English

documents

44356

None

302435339416912908

2022-12-07

N

/docs/en/package-information/98ASA10760D.pdf

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

/docs/en/package-information/98ASA10760D.pdf

documents

302435339416912908

Package Information

N

en

None

D

pdf

B

N

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

44.4 KB

SOT1664-1

N

1159978986098697260288

Technical Notes

1

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 3

Jan 19, 2004

Technical Notes

This document explains the format used by NXP<sup>®</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

N

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

N

en

None

Y

pdf

0

N

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

N

1074535848819727693421

true Y Products

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet[MHT2012N]

PDFJul 12, 2018Rev 0

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

PDFMar 21, 2016Rev B

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

1-5of 8 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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MHT2012N S-Parameters

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MHT2012N RF High-Power Model AWR Product Model Design Kit

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MHT2012N RF High-Power Model ADS Product Model Design Kit

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Printed Circuit Boards and Schematics
MHT2012N 2400-2500 MHz Reference Circuit Design Files

ZIPRev 0Sep 20, 20192.8 MBMHT2012N-2400-2500-MHz-Reference-Circuit

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Printed Circuit Boards and Schematics
MHT2012N 2450 MHz PCB DXF file

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Calculators
MHT2012N RF Power Electromigration MTTF Calculation Program

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Show All

2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

Product Details

Features

RF Performance Table

Typical Performance

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet[MHT2012N]

Package Information (1)

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet[MHT2012N]

Package Information (1)

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MHT2012N S-Parameters

MHT2012N RF High-Power Model AWR Product Model Design Kit

MHT2012N RF High-Power Model ADS Product Model Design Kit

MHT2012N 2400-2500 MHz Reference Circuit Design Files

MHT2012N 2450 MHz PCB DXF file

MHT2012N RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MHT2012N S-Parameters

MHT2012N RF High-Power Model AWR Product Model Design Kit

MHT2012N RF High-Power Model ADS Product Model Design Kit

MHT2012N 2400-2500 MHz Reference Circuit Design Files

MHT2012N 2450 MHz PCB DXF file

MHT2012N RF Power Electromigration MTTF Calculation Program

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