MHT2012N|2450 MHz, 12.5 W CW, 28 V

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MHT2012N

The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.

See product image

Data Sheet

Application Notes

Product Details

Features

High gain simplifies layout and reduced PCB area compared to a discrete design
Qualified up to a maximum of 32 V_DD operation
On-chip input and interstage matching (50 ohm input)
Integrated quiescent current temperature compensation with enable/disable function
Integrated ESD protection
150°C case and junction temperature ratinge
Ideal as a driver for high power RF energy applications
RoHS compliant

Driver for consumer and commercial cooking applications
Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
Driver for medical applications, such as microwave ablation, renal denervation and diathermy
Final stage for portable heating devices and portable medical systems

Part numbers include: MHT2012N.

RF Performance Table

Typical Performance

V_DD = 28 Vdc, P_in = 11 dBm, I_DQ1 = 15 mA, I_DQ2 = 75 mA

Frequency (MHz)	Signal Type	G_ps (dB)	PAE (%)	P_out (W)
2400	CW	30.1	51.3	13.0
2450		30.0	51.4	12.7
2500		29.7	50.5	11.7

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

PDFRev 0Jul 12, 2018444.6 KBMHT2012NEnglish
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

PDFRev BMar 21, 201644.4 KBSOT1664-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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MHT2012N S-Parameters

S2PRev 0Oct 30, 2018 00:00:0020.8 KBMHT2012N_SP
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MHT2012N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:002.1 MBMHT2012N_MDL_AWR
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MHT2012N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00832.1 KBMHT2012N_MDL_ADS
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^{Printed Circuit Boards and Schematics}
MHT2012N 2400-2500 MHz Reference Circuit Design Files

ZIPRev 0Sep 20, 2019 00:00:002.8 MBMHT2012N-2400-2500-MHz-Reference-Circuit
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^{Printed Circuit Boards and Schematics}
MHT2012N 2450 MHz PCB DXF file

ZIPRev 1Jul 12, 2018 00:00:0020.9 KBMHT2012N-2450-PCB
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^Calculators
MHT2012N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 13, 2018 00:00:0095.1 KBMHT2012N-MTTF-CALC
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Show All

2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

Product Details

Features

RF Performance Table

Typical Performance

Buy/Parametrics

Documentation

Filter by

MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MHT2012N S-Parameters

MHT2012N RF High-Power Model AWR Product Model Design Kit

MHT2012N RF High-Power Model ADS Product Model Design Kit

MHT2012N 2400-2500 MHz Reference Circuit Design Files

MHT2012N 2450 MHz PCB DXF file

MHT2012N RF Power Electromigration MTTF Calculation Program

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