MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB | NXP Semiconductors

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50-4000 MHz, 3-Bit 1 dB LSB Digital Step Attenuator

MMT20303H Active
The MMT20303H is an integrated 3-bit digital step attenuator with a 1 dB step size. It is controlled via a 3-bit parallel interface and operates from a 3 to 5 V supply. The MMT20303H is suitable for 3G/4G small cell transmitter and mobile radio applications using frequencies from 50 to 4000 MHz.

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Block Diagram

MMT20303H Block Diagram

MMT20303H Block Diagram
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Features

Key Features

  • Frequency: 50-4000 MHz
  • Maximum RF Input Power: 30 dBm (CW)
  • Typical IIP3 > 50 dBm
  • Programmable Attenuator with 7 dB Maximum Range, 1 dB Step Size
  • Low Insertion Loss
  • ±0.1 dB Typical Bit Error
  • Excellent Consistency over Temperature and Supply Voltage
  • Single 3 to 5 V Supply
  • 50 Ohm Operation
  • P1dB Independent of Control Voltage
  • 3-bit Digital Control
  • TTL/CMOS Interface Compatible
  • Cost-effective 16-pin, 3 mm QFN Surface Mount Plastic Package
  • RoHS Compliant

RF Performance Table

Typical Performance

Characteristic Symbol 250
MHz		 900
MHz		 4000
MHz		 Unit
Insertion LossIL –0.6–0.7–1.3dB
Attenuation Accuracy (Worst Case State)— +0.1, –0.1+0.1, 0+0.1, –0.1dB
Third Order Intercept Input Point(2)IIP3 475452dBm
Power Input @ 1 dB CompressionP1dB 3035(3)35(3)dBm
1. VDD = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned for specific frequency.
2. Two-tone input power = +13 dBm each tone.
3. Operate within specified maximum rating.

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MMT20303H
Data Sheet

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N true 0 PSPMMT20303Hen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English MMT20303H 50-4000 MHz, 3-bit 1 dB LSB suitable for 3G/4G small cell transmitter and mobile radio applications 1449535537189729367911 PSP 377.4 KB None None documents None 1449535537189729367911 /docs/en/data-sheet/MMT20303H.pdf 377435 /docs/en/data-sheet/MMT20303H.pdf MMT20303H documents N N 2015-12-07 MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB Data Sheet /docs/en/data-sheet/MMT20303H.pdf /docs/en/data-sheet/MMT20303H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 6, 2015 980000996212993340 Data Sheet Y N MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Package Information Package Information 1 3 A English 1447805214468718924142 PSP 55.2 KB None None documents None 1447805214468718924142 /docs/en/package-information/98ASA00598D.pdf 55184 /docs/en/package-information/98ASA00598D.pdf SOT758-4 documents N N 2016-10-31 98ASA00598D, QFN Punch, 3.0x3.0x0.85, Pitch 0.5, 16 Pins /docs/en/package-information/98ASA00598D.pdf /docs/en/package-information/98ASA00598D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 15, 2016 302435339416912908 Package Information D N 98ASA00598D, QFN Punch, 3.0x3.0x0.85, Pitch 0.5, 16 Pins false 0 MMT20303H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/MMT20303H.pdf 2015-12-07 1449535537189729367911 PSP 1 Dec 6, 2015 Data Sheet MMT20303H 50-4000 MHz, 3-bit 1 dB LSB suitable for 3G/4G small cell transmitter and mobile radio applications None /docs/en/data-sheet/MMT20303H.pdf English documents 377435 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMT20303H.pdf MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB Data Sheet /docs/en/data-sheet/MMT20303H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB Data Sheet 377.4 KB MMT20303H N 1449535537189729367911 Package Information 1 /docs/en/package-information/98ASA00598D.pdf 2016-10-31 1447805214468718924142 PSP 3 Jan 15, 2016 Package Information None /docs/en/package-information/98ASA00598D.pdf English documents 55184 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00598D.pdf 98ASA00598D, QFN Punch, 3.0x3.0x0.85, Pitch 0.5, 16 Pins /docs/en/package-information/98ASA00598D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00598D, QFN Punch, 3.0x3.0x0.85, Pitch 0.5, 16 Pins 55.2 KB SOT758-4 N 1447805214468718924142 true Y Products

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