MRFE6VP5150N|150 W CW, 1.8-600 MHz, , 50 V | NXP Semiconductors

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Consumer

Technologies

1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP5150N Not Recommended for New Designs
These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

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Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,3)CW17922.574.6

230 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
230(2)CW15026.372.0
230(2)Pulse (100 µsec,
20% Duty Cycle)		150 Peak26.170.3

Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
98(1)CW> 65:1
at all Phase
Angles		3.0
(3 dB
Overdrive)		50No
Device
Degradation
230(2)Pulse
(100 µsec,
20% Duty Cycle)		0.62 Peak
(3 dB
Overdrive)
1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

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MRFE6VP5150GN
Data Sheet

Not Recommended for New Designs

MRFE6VP5150N
Data Sheet

Not Recommended for New Designs

N true 0 PSPMRFE6VP5150Nen 7 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Supporting Information Supporting Information t531 1 Technical Notes Technical Notes t521 1 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English MRFE6VP5150N and MRFE6VP5150GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. 1399929991713701483461 PSP 995.6 KB None None documents None 1399929991713701483461 /docs/en/data-sheet/MRFE6VP5150N.pdf 995635 /docs/en/data-sheet/MRFE6VP5150N.pdf MRFE6VP5150N documents N N 2016-10-31 MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP5150N.pdf /docs/en/data-sheet/MRFE6VP5150N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 25, 2014 980000996212993340 Data Sheet Y N MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet Application Note Application Note 1 2 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 4 E English 98ASA10578D, 1487-05, TO-270 4 LEAD, Wide Body Gull Wing 117Dp21m PSP 75.2 KB None None documents None 117Dp21m /docs/en/package-information/98ASA10578D.pdf 75249 /docs/en/package-information/98ASA10578D.pdf SOT1736-2 documents N N 2016-10-31 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins /docs/en/package-information/98ASA10578D.pdf /docs/en/package-information/98ASA10578D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 17, 2016 302435339416912908 Package Information D N 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins 5 F English 98ASA10577D, 1486-03, TO-270, 4 Lead 117Dnwyr PSP 75.9 KB None None documents None 117Dnwyr /docs/en/package-information/98ASA10577D.pdf 75944 /docs/en/package-information/98ASA10577D.pdf SOT1736-1 documents N N 2016-10-31 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf /docs/en/package-information/98ASA10577D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 18, 2016 302435339416912908 Package Information D N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins Supporting Information Supporting Information 1 6 0 English Plastic packaged devices designed specifically for high ruggedness applications 1400817482641715198729 PSP 295.3 KB None None documents None 1400817482641715198729 /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf 295256 /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf RF_RUGGED_PLASTIC_INDUSTRIAL_TRN documents N N 2016-10-31 Rugged Plastic for Industrial Applications /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en May 23, 2014 371282830530968666 Supporting Information Y N Rugged Plastic for Industrial Applications White Paper White Paper 1 7 2 English Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. 1415247676533716175304 PSP 911.8 KB None None documents None 1415247676533716175304 /docs/en/white-paper/RFPLASTICWP.pdf 911768 /docs/en/white-paper/RFPLASTICWP.pdf RFPLASTICWP documents N N 2016-10-31 Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf /docs/en/white-paper/RFPLASTICWP.pdf White Paper N 918633085541740938 2024-03-13 pdf N en Sep 24, 2015 918633085541740938 White Paper Y N Designing with Plastic RF Power Transistors White Paper false 0 MRFE6VP5150N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 2 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 Data Sheet 1 /docs/en/data-sheet/MRFE6VP5150N.pdf 2016-10-31 1399929991713701483461 PSP 1 Jul 25, 2014 Data Sheet MRFE6VP5150N and MRFE6VP5150GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. None /docs/en/data-sheet/MRFE6VP5150N.pdf English documents 995635 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6VP5150N.pdf MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP5150N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet 995.6 KB MRFE6VP5150N N 1399929991713701483461 Package Information 2 /docs/en/package-information/98ASA10578D.pdf 2016-10-31 117Dp21m PSP 4 Mar 17, 2016 Package Information 98ASA10578D, 1487-05, TO-270 4 LEAD, Wide Body Gull Wing None /docs/en/package-information/98ASA10578D.pdf English documents 75249 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10578D.pdf 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins /docs/en/package-information/98ASA10578D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins 75.2 KB SOT1736-2 N 117Dp21m /docs/en/package-information/98ASA10577D.pdf 2016-10-31 117Dnwyr PSP 5 Jan 18, 2016 Package Information 98ASA10577D, 1486-03, TO-270, 4 Lead None /docs/en/package-information/98ASA10577D.pdf English documents 75944 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10577D.pdf 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins 75.9 KB SOT1736-1 N 117Dnwyr Supporting Information 1 /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf 2016-10-31 1400817482641715198729 PSP 6 May 23, 2014 Supporting Information Plastic packaged devices designed specifically for high ruggedness applications None /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf English documents 295256 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf Rugged Plastic for Industrial Applications /docs/en/supporting-information/RF_RUGGED_PLASTIC_INDUSTRIAL_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N Rugged Plastic for Industrial Applications 295.3 KB RF_RUGGED_PLASTIC_INDUSTRIAL_TRN N 1400817482641715198729 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 White Paper 1 /docs/en/white-paper/RFPLASTICWP.pdf 2016-10-31 1415247676533716175304 PSP 7 Sep 24, 2015 White Paper Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. None /docs/en/white-paper/RFPLASTICWP.pdf English documents 911768 None 918633085541740938 2024-03-13 N /docs/en/white-paper/RFPLASTICWP.pdf Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf documents 918633085541740938 White Paper N en None Y pdf 2 N N Designing with Plastic RF Power Transistors White Paper 911.8 KB RFPLASTICWP N 1415247676533716175304 true Y Products

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