AFM907N|8 W CW, 136-941 MHz, 7.5 V | NXP Semiconductors

Automotive

Industrial

Consumer

Technologies

8 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

AFM907N Not Recommended for New Designs
The AFM907N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

See product image

Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across the band
  • Exceptional thermal performance
  • Extreme ruggedness
  • High linearity for: TETRA, SSB
  • RoHS compliant
  • Output stage VHF band handheld radio
  • Output stage UHF band handheld radio
  • Output stage for 700-800 MHz handheld radio

RF Performance Tables

Wideband Performance

(In 350-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)(1)		 Pin
(W)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
3500.2515.256.68.4
4350.2515.561.58.9
5200.2515.064.27.9

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
520(2)20.773.98.4

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
520(2) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)		 10.8 No Device Degradation
1. Measured in 350-520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband RF test fixture.

Buy/Parametrics

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPAFM907Nen 5 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English AFM907N 8 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment 1492773813372726874420 PSP 1.6 MB None None documents None 1492773813372726874420 /docs/en/data-sheet/AFM907N.pdf 1579672 /docs/en/data-sheet/AFM907N.pdf AFM907N documents N N 2017-04-21 AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM907N.pdf /docs/en/data-sheet/AFM907N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 28, 2019 980000996212993340 Data Sheet Y N AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 5 B English 1472460122444712310725 PSP 51.9 KB None None documents None 1472460122444712310725 /docs/en/package-information/98ASA00868D.pdf 51876 /docs/en/package-information/98ASA00868D.pdf SOT1862-1 documents N N 2016-11-09 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf /docs/en/package-information/98ASA00868D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jul 27, 2016 302435339416912908 Package Information D N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins false 0 AFM907N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/AFM907N.pdf 2017-04-21 1492773813372726874420 PSP 1 May 28, 2019 Data Sheet AFM907N 8 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment None /docs/en/data-sheet/AFM907N.pdf English documents 1579672 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFM907N.pdf AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM907N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet 1.6 MB AFM907N N 1492773813372726874420 Package Information 1 /docs/en/package-information/98ASA00868D.pdf 2016-11-09 1472460122444712310725 PSP 5 Jul 27, 2016 Package Information None /docs/en/package-information/98ASA00868D.pdf English documents 51876 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00868D.pdf 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins 51.9 KB SOT1862-1 N 1472460122444712310725 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

Documentation

Quick reference to our documentation types.

Filters

5 documents

Compact List

Application Note (2)
Data Sheet (1)
Package Information (1)
Technical Notes (1)

Design Files

Quick reference to our design files types.
Filters

1-5of 8 design files

Show All

Support

What do you need help with?

  • Narrow your search
Search