MRFX600H|600 W CW, 1.8-400 MHz, 65 V | NXP Semiconductors

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600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX600H Active
  • This page contains information on a product that is not recommended for new designs.

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The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.

Features

  • Unmatched input and output allowing wide frequency range utilization
  • Output impedance fits a 4:1 transformer
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

Frequency
(MHz)		 Signal Type VDD
(V)		 Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108 (1,2)CW62680 CW21.383.0
230 (3)Pulse
(100 µsec, 20% Duty Cycle)		65600 Peak26.474.4

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230 (3)Pulse
(100 µsec, 20% Duty Cycle)		> 65:1
at all Phase Angles		2.5 Peak
(3 dB Overdrive)		65No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

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N true 0 PSPMRFX600Hen 6 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 3 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English MRFX600H 600 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1537495531134721876466 PSP 644.2 KB None None documents None 1537495531134721876466 /docs/en/data-sheet/MRFX600H.pdf 644195 /docs/en/data-sheet/MRFX600H.pdf MRFX600H documents N N 2018-09-20 MRFX600H 600 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX600H.pdf /docs/en/data-sheet/MRFX600H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 20, 2018 980000996212993340 Data Sheet Y N MRFX600H 600 W CW, 1.8-400 MHz, 65 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 3 4 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L 5 A English 98ASA10793D, 465M-01, NI 780H-4L 1177631115779705085440 PSP 47.9 KB None None documents None 1177631115779705085440 /docs/en/package-information/98ASA10793D.pdf 47948 /docs/en/package-information/98ASA10793D.pdf SOT1827-1 documents N N 2016-10-31 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf /docs/en/package-information/98ASA10793D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10793D, NI-780H-4L 6 C English 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L 1385566997554703827666 PSP 47.2 KB None None documents None 1385566997554703827666 /docs/en/package-information/98ASA00238D.pdf 47244 /docs/en/package-information/98ASA00238D.pdf SOT1805-1 documents N N 2016-10-31 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L /docs/en/package-information/98ASA00238D.pdf /docs/en/package-information/98ASA00238D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L false 0 MRFX600H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/MRFX600H.pdf 2018-09-20 1537495531134721876466 PSP 1 Sep 20, 2018 Data Sheet MRFX600H 600 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRFX600H.pdf English documents 644195 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX600H.pdf MRFX600H 600 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX600H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MRFX600H 600 W CW, 1.8-400 MHz, 65 V Data Sheet 644.2 KB MRFX600H N 1537495531134721876466 Package Information 3 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 4 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 /docs/en/package-information/98ASA10793D.pdf 2016-10-31 1177631115779705085440 PSP 5 Mar 21, 2016 Package Information 98ASA10793D, 465M-01, NI 780H-4L None /docs/en/package-information/98ASA10793D.pdf English documents 47948 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10793D.pdf 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA10793D, NI-780H-4L 47.9 KB SOT1827-1 N 1177631115779705085440 /docs/en/package-information/98ASA00238D.pdf 2016-10-31 1385566997554703827666 PSP 6 Feb 26, 2016 Package Information 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L None /docs/en/package-information/98ASA00238D.pdf English documents 47244 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00238D.pdf 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L /docs/en/package-information/98ASA00238D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L 47.2 KB SOT1805-1 N 1385566997554703827666 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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