MD8IC970N Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
940
Number of pins
16
Package Style
DFM
Amp Class
AB
Test Signal
2-TONE
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.6
P1dB (Typ) (dBm)
49
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
850, 940
Efficiency (Typ) (%)
42.1
Frequency Band (Hz)
850000000, 940000000
Intermodulation Distortion - IMD (Typ) (dBc)
-31.3
ParameterValue
Description
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
fi(RF) [min] (MHz)
850
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
35 @ AVG
P1dB (Typ) (W)
79
Gain (Typ) (dB)
32.6
Power Gain (Typ) (dB) @ f (MHz)
32.6 @ 940
Frequency (Max) (MHz)
940
Frequency (Min) (MHz)
850
Frequency (Min-Max) (GHz)
0.85 to 0.94
frange [max] (MHz)
940
frange [min] (MHz)
850
Rth(j-a) (K/W)
0.6
Matching
input and output impedance matching
Modes of Operation
dual-tone modulation
Intermodulation Distortion - IM3 (Typ) (dBc)
-31.3

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MD8IC970NR1(935317375528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
2422.5

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
MD8IC970NR1
(935317375528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MD8IC970NR1
(935317375528)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MD8IC970NR1
(935317375528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MD8IC970N

The MD8IC970NR1 and MD8IC970GNR1 wideband integrated circuits are designed with on-chip prematching that make them usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. These devices have a 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency sub-band.