A2T23H160-24S|Airfast® 28 W, 2300-2400 MHz | NXP Semiconductors

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2300-2400 MHz, 28 W AVG., 28 V Airfast® RF Power LDMOS Transistor

A2T23H160-24S End of Life
  • This page contains information on a product that is not recommended for new designs.
The A2T23H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

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Product Details

Features

  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.7 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2300 MHz17.748.87.9–33.5
2350 MHz17.748.48.0–37.2
2400 MHz17.848.27.9–37.0

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A2T23H160-24S
Data Sheet

End of Life

N true 0 PSPA2T23H160-24Sen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations 1447988648463718989465 PSP 460.2 KB None None documents None 1447988648463718989465 /docs/en/data-sheet/A2T23H160-24S.pdf 460216 /docs/en/data-sheet/A2T23H160-24S.pdf A2T23H160-24S documents N N 2016-10-31 A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T23H160-24S.pdf /docs/en/data-sheet/A2T23H160-24S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 17, 2015 980000996212993340 Data Sheet Y N A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 O English 1410551766743705199585 PSP 57.3 KB None None documents None 1410551766743705199585 /docs/en/package-information/98ASA00674D.pdf 57300 /docs/en/package-information/98ASA00674D.pdf SOT1799-3 documents N N 2016-10-31 98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins /docs/en/package-information/98ASA00674D.pdf /docs/en/package-information/98ASA00674D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 16, 2014 302435339416912908 Package Information D N 98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins false 0 A2T23H160-24S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/A2T23H160-24S.pdf 2016-10-31 1447988648463718989465 PSP 1 Nov 17, 2015 Data Sheet A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T23H160-24S.pdf English documents 460216 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T23H160-24S.pdf A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T23H160-24S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet 460.2 KB A2T23H160-24S N 1447988648463718989465 Package Information 1 /docs/en/package-information/98ASA00674D.pdf 2016-10-31 1410551766743705199585 PSP 3 Jan 16, 2014 Package Information None /docs/en/package-information/98ASA00674D.pdf English documents 57300 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00674D.pdf 98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins /docs/en/package-information/98ASA00674D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins 57.3 KB SOT1799-3 N 1410551766743705199585 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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