A2T21H100-25S|2110-2170 MHz, 18 W, 28 V

A2T21H100-25S|2110-2170 MHz, 18 W, 28 V | NXP Semiconductors

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A2T21H100-25S

The A2T21H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

See product image

Data Sheet

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 250 mA, V_GSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	52.1	8.2	–32.4
2140 MHz	17.4	51.0	8.0	–33.1
2170 MHz	17.4	50.5	8.0	–35.0

Buy/Parametrics

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English

18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz

1433220928470703827520 PSP

443.3 KB

None

documents

None

1433220928470703827520

/docs/en/data-sheet/A2T21H100-25S.pdf

443275

/docs/en/data-sheet/A2T21H100-25S.pdf

A2T21H100-25S

documents

2016-10-31

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

/docs/en/data-sheet/A2T21H100-25S.pdf /docs/en/data-sheet/A2T21H100-25S.pdf

Data Sheet

980000996212993340

2022-12-07

pdf N

Jan 26, 2022

980000996212993340

Data Sheet

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

Technical Notes Technical Notes 1 2

English

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

None

documents

None

1074535848819727693421

/docs/en/engineering-bulletin/EB212.pdf

170979

/docs/en/engineering-bulletin/EB212.pdf

EB212

documents

2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf

Technical Notes

389245547230346745

2024-09-13

pdf N

Jan 19, 2004

389245547230346745

Technical Notes

Using Data Sheet Impedances for RF LDMOS Devices

Package Information Package Information 1 3

English

1362954192319715956460 PSP

56.1 KB

None

documents

None

1362954192319715956460

/docs/en/package-information/98ASA00406D.pdf

56071

/docs/en/package-information/98ASA00406D.pdf

SOT1797-1

documents

2016-10-31

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

/docs/en/package-information/98ASA00406D.pdf /docs/en/package-information/98ASA00406D.pdf

Package Information

302435339416912908

2022-12-07

pdf N

Feb 15, 2016

302435339416912908

Package Information

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

false 0 A2T21H100-25S downloads en true 1 Y PSP Data Sheet

/docs/en/data-sheet/A2T21H100-25S.pdf

2016-10-31

1433220928470703827520 PSP 1

Jan 26, 2022

Data Sheet

18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz

None

/docs/en/data-sheet/A2T21H100-25S.pdf

English

documents

443275

None

980000996212993340

2022-12-07

/docs/en/data-sheet/A2T21H100-25S.pdf

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

/docs/en/data-sheet/A2T21H100-25S.pdf

documents

980000996212993340

Data Sheet

None

pdf

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

443.3 KB

A2T21H100-25S

1433220928470703827520

Package Information

/docs/en/package-information/98ASA00406D.pdf

2016-10-31

1362954192319715956460 PSP 3

Feb 15, 2016

Package Information

None

/docs/en/package-information/98ASA00406D.pdf

English

documents

56071

None

302435339416912908

2022-12-07

/docs/en/package-information/98ASA00406D.pdf

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

/docs/en/package-information/98ASA00406D.pdf

documents

302435339416912908

Package Information

None

pdf

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

56.1 KB

SOT1797-1

1362954192319715956460

Technical Notes

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 2

Jan 19, 2004

Technical Notes

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

None

pdf

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

1074535848819727693421

true Y Products

Documentation

Quick reference to our documentation types.

3 documents

Compact List

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

PDFJan 26, 2022Rev 1

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Data Sheet (1)

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

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2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]