A2T09D400-23N|716-960 MHz, 93 W Avg., 28 V | NXP Semiconductors

716-960 MHz, 93 W Avg., 28 V Airfast® RF Power LDMOS Transistor

  • This page contains information on a product that is not recommended for new designs.

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Product Details

Features

  • Production Tested in a Symmetrical Doherty Configuration
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant

RF Performance Table

800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 1200 mA, VGSB = 1.12 Vdc, Pout = 93 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
776 MHz17.845.97.0–36.8
806 MHz18.246.87.2–37.8
836 MHz17.948.07.1–37.1

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N true 0 PSPA2T09D400-23Nen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations 1457823191638724223927 PSP 448.3 KB None None documents None 1457823191638724223927 /docs/en/data-sheet/A2T09D400-23N.pdf 448345 /docs/en/data-sheet/A2T09D400-23N.pdf A2T09D400-23N documents N N 2016-10-31 A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T09D400-23N.pdf /docs/en/data-sheet/A2T09D400-23N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 11, 2016 980000996212993340 Data Sheet Y N A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 A English OM-1230-4L2S 1458194636779707286560 PSP 90.3 KB None None documents None 1458194636779707286560 /docs/en/package-information/98ASA00885D.pdf 90330 /docs/en/package-information/98ASA00885D.pdf SOT1819-2 documents N N 2016-10-31 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf /docs/en/package-information/98ASA00885D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 14, 2016 302435339416912908 Package Information D N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins false 0 A2T09D400-23N downloads en true 1 Y PSP Y Y Data Sheet 1 /docs/en/data-sheet/A2T09D400-23N.pdf 2016-10-31 1457823191638724223927 PSP 1 Mar 11, 2016 Data Sheet A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T09D400-23N.pdf English documents 448345 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T09D400-23N.pdf A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T09D400-23N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet 448.3 KB A2T09D400-23N N 1457823191638724223927 Package Information 1 /docs/en/package-information/98ASA00885D.pdf 2016-10-31 1458194636779707286560 PSP 3 Mar 14, 2016 Package Information OM-1230-4L2S None /docs/en/package-information/98ASA00885D.pdf English documents 90330 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00885D.pdf 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins 90.3 KB SOT1819-2 N 1458194636779707286560 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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