Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
716-960 MHz, 93 W Avg., 28 V Airfast® RF Power LDMOS Transistor
- This page contains information on a product that is not recommended for new designs.
The A2T09D400-23NR6 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
OM-1230-4L2S Package Image
Product Details
Features
- Production Tested in a Symmetrical Doherty Configuration
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Part numbers include: A2T09D400-23N.
RF Performance Table
800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 1200 mA, VGSB = 1.12 Vdc, Pout = 93 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 776 MHz | 17.8 | 45.9 | 7.0 | –36.8 |
| 806 MHz | 18.2 | 46.8 | 7.2 | –37.8 |
| 836 MHz | 17.9 | 48.0 | 7.1 | –37.1 |
Buy/Parametrics
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Documentation
Quick reference to our documentation types.
3 documents
-
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices
-
Package Information
98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins
