Design Files
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1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors
- This page contains information on a product that is not recommended for new designs.
These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.
NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image
Product Details
Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull or quadrature configuration
- Qualified up to a maximum of 52 VDD operation
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS Compliant
- These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
- Military and commercial L-Band radar systems
Part numbers include: MMRF1314H, MMRF1314HS.
RF Performance Tables
Typical Performance
In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 1200 | Pulse (128 µsec, 10% Duty Cycle) | 1130 Peak | 15.5 | 47.5 |
| 1300 | 1170 Peak | 17.2 | 47.0 | |
| 1400 | 1000 Peak | 17.0 | 46.5 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 1400 | Pulse (128 µsec, 10% Duty Cycle) | > 20:1 at all Phase Angles | 31.6 Peak (3 dB Overdrive) | 52 | No Device Degradation |
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
1-5 of 7 documents
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Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins
