A2T07D160W04S|716-960 MHz, 30 W Avg., 28 V

Product Details

Features

Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Tables

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 450 mA, V_GSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
758 MHz	22.2	47.7	7.3	–29.3
780 MHz	22.1	47.9	7.3	–30.1
803 MHz	21.5	48.5	7.2	–31.4

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 450 mA, V_GSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
865 MHz	20.5	48.4	7.4	–31.5
880 MHz	20.5	48.6	7.4	–31.6
895 MHz	20.3	49.2	7.3	–31.6

Buy/Parametrics

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English

The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.

1407964930618707520669 PSP

869.2 KB

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documents

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2016-10-31

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet

/docs/en/data-sheet/A2T07D160W04S.pdf /docs/en/data-sheet/A2T07D160W04S.pdf

Data Sheet

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980000996212993340

2022-12-07

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Aug 13, 2014

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Data Sheet

Y

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A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet

Technical Notes Technical Notes 1 2

0

English

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

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/docs/en/engineering-bulletin/EB212.pdf

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EB212

documents

N

2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf

Technical Notes

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389245547230346745

2024-09-13

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Jan 19, 2004

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Technical Notes

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Using Data Sheet Impedances for RF LDMOS Devices

Package Information Package Information 1 3

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English

98ASA10718D, 465H-02, NI-780S-4L

1145376001821716037786 PSP

42.9 KB

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documents

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/docs/en/package-information/98ASA10718D.pdf

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2016-10-31

NI-780S-4L

/docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf

Package Information

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2022-12-07

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Aug 15, 2016

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Package Information

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1

/docs/en/data-sheet/A2T07D160W04S.pdf

2016-10-31

1407964930618707520669 PSP 1

Aug 13, 2014

Data Sheet

The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.

None

/docs/en/data-sheet/A2T07D160W04S.pdf

English

documents

869206

None

980000996212993340

2022-12-07

N

/docs/en/data-sheet/A2T07D160W04S.pdf

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet

/docs/en/data-sheet/A2T07D160W04S.pdf

documents

980000996212993340

Data Sheet

N

en

None

Y

pdf

0

N

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet

869.2 KB

A2T07D160W04S

N

1407964930618707520669

Package Information

1

/docs/en/package-information/98ASA10718D.pdf

2016-10-31

1145376001821716037786 PSP 3

Aug 15, 2016

Package Information

98ASA10718D, 465H-02, NI-780S-4L

None

/docs/en/package-information/98ASA10718D.pdf

English

documents

42869

None

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2022-12-07

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/docs/en/package-information/98ASA10718D.pdf

NI-780S-4L

/docs/en/package-information/98ASA10718D.pdf

documents

302435339416912908

Package Information

N

en

None

D

pdf

C

N

NI-780S-4L

42.9 KB

98ASA10718D

N

1145376001821716037786

Technical Notes

1

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 2

Jan 19, 2004

Technical Notes

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

N

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

N

en

None

Y

pdf

0

N

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast^® RF Power LDMOS Transistor - Data Sheet[A2T07D160W04S]

PDFAug 13, 2014Rev 0

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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Models
A2T07D160W04S RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019328.2 KBA2T07D160W04S_MDL_ADS

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A2T07D160W04SR3 S-Parameters

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A2T07D160W04S 865-895 MHz PCB DXF file

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716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

780 MHz

880 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet[A2T07D160W04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Data Sheet (1)

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet[A2T07D160W04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A2T07D160W04S RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

A2T07D160W04SR3 S-Parameters

A2T07D160W04SR3 S-Parameters

A2T07D160W04S 865-895 MHz PCB DXF file

A2T07D160W04S 758-803 MHz PCB DXF file

Filter by

Filter By

A2T07D160W04S RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

A2T07D160W04SR3 S-Parameters

A2T07D160W04SR3 S-Parameters

A2T07D160W04S 865-895 MHz PCB DXF file

A2T07D160W04S 758-803 MHz PCB DXF file

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716-960 MHz, 30 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast^® RF Power LDMOS Transistor - Data Sheet[A2T07D160W04S]

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast^® RF Power LDMOS Transistor - Data Sheet[A2T07D160W04S]