AFT27S012N|728-2700 MHz, 1.26 W Avg, 28 V | NXP Semiconductors

728-2700 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor

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Product Details

Features

  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • Universal broadband driven device with internal RF feedback
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz20.822.09.8–41.1–9
2140 MHz20.922.69.6–40.7–10
2170 MHz20.922.89.4–40.8–10
2200 MHz20.822.99.3–40.4–9
1. All data measured in fixture with device soldered to heatsink.

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N true 0 PSPAFT27S012Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations 1500522378816725506396 PSP 407.4 KB None None documents None 1500522378816725506396 /docs/en/data-sheet/AFT27S012N.pdf 407440 /docs/en/data-sheet/AFT27S012N.pdf AFT27S012N documents N N 2017-07-19 AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet /docs/en/data-sheet/AFT27S012N.pdf /docs/en/data-sheet/AFT27S012N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 13, 2017 980000996212993340 Data Sheet Y N AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 A English 1370451903375708697913 PSP 55.3 KB None None documents None 1370451903375708697913 /docs/en/package-information/98ASA00476D.pdf 55307 /docs/en/package-information/98ASA00476D.pdf SOT1811-2 documents N N 2016-10-31 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf /docs/en/package-information/98ASA00476D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins false 0 AFT27S012N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/AFT27S012N.pdf 2017-07-19 1500522378816725506396 PSP 1 Jul 13, 2017 Data Sheet AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/AFT27S012N.pdf English documents 407440 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT27S012N.pdf AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet /docs/en/data-sheet/AFT27S012N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet 407.4 KB AFT27S012N N 1500522378816725506396 Package Information 1 /docs/en/package-information/98ASA00476D.pdf 2016-10-31 1370451903375708697913 PSP 4 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00476D.pdf English documents 55307 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00476D.pdf 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins 55.3 KB SOT1811-2 N 1370451903375708697913 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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