MRFE6VP5600H|600 W CW, 1.8-600 MHz, 50 V

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MRFE6VP5600H

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

See product image

Data Sheet

Product Details

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Part numbers include: MRFE6VP5600-434, MRFE6VP5600H, MRFE6VP5600HS.

RF Performance Table

230 MHz Narrowband

Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA

Signal Type	Pout (W)	f (MHz)	G_ps (dB)	η_D (%)	IRL (dB)
Pulse (100 µsec, 20% Duty Cycle)	600 Peak	230	25.0	74.6	–18
CW	600 Avg.	230	24.6	75.2	–17

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
- 600 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

PDFRev 1Jan 6, 2011952.8 KBMRFE6VP5600HEnglish
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HOct 25, 2019159.0 KBSOT1787-1English
^{Package Information}
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HFeb 23, 201644.6 KBSOT1829-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Models
MRFE6VP5600HR6, MRFE6VP5600HSR6 S-Parameters

S2PRev 0Dec 14, 2010 00:00:007.3 KBMRFE6VP5600H_SP
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^Models
MRFE6VP5600HR6, MRFE6VP5600HSR6 RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Mar 2, 2012 00:00:00382.0 KBMRFE6VP5600H_MDL_AWR
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^Models
MRFE6VP5600H, MRFE6VP5600HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00272.7 KBMRFE6VP5600H_MDL_ADS
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^{Printed Circuit Boards and Schematics}
MRFE6VP5600H 434 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019 00:00:001.6 MBMRFE6VP5600H-434-MHz-Reference-Circuit
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^Calculators
MRFE6VP5600H, MRFE6VP5600HS RF Power Electromigration MTTF Calculation Program

XLSRev 0Dec 15, 2010 00:00:0061.4 KBMRFE6VP5600H_MTTF_CALC
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Show All

1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Product Details

Features

RF Performance Table

230 MHz Narrowband

Buy/Parametrics

Documentation

Filter by

MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Using Data Sheet Impedances for RF LDMOS Devices

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VP5600HR6, MRFE6VP5600HSR6 S-Parameters

MRFE6VP5600HR6, MRFE6VP5600HSR6 RF High-Power Model AWR Product Model Design Kit

MRFE6VP5600H, MRFE6VP5600HS RF High-Power Model ADS Product Model Design Kit

MRFE6VP5600H 434 MHz Reference Circuit Design Files

MRFE6VP5600H, MRFE6VP5600HS RF Power Electromigration MTTF Calculation Program

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