MRF6V12500H|500 W Pulse, 960-1215 MHz, 50 V

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MRF6V12500H

These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant

Part numbers include: MRF6V12500GS, MRF6V12500H, MRF6V12500HS.

RF Performance Table

Typical Pulse Performance

V_DD = 50 Volts, I_DQ = 200 mA

Application	Signal Type	Pout⁽¹⁾ (W)	Freq. (MHz)	G_ps (dB)	η_D (%)
Narrowband Short Pulse	Pulse (128 µsec, 10% Duty Cycle)	500 Peak	1030	19.7	62.0
Narrowband Mode S ELM	Pulse (48 x (32 µsec on, 18 µsec off), Period 2.4 msec, 6.4% Long-term Duty Cycle)	500 Peak	1030	19.7	62.0
Broadband	Pulse (128 µsec, 10% Duty Cycle)	500 Peak	960-1215	18.5	57.0

1. Minimum output power for each specified pulse condition.

Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 9 documents

^{Data Sheet}
MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet

PDFRev 5Jul 13, 2016824.5 KBMRF6V12500HEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
^Brochure
RF Solutions for Commercial Aerospace

PDFRev 2Sep 4, 20151.9 MBBR1608English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDFRev HMar 22, 201644.1 KBSOT1792-1English
^{Package Information}
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDFRev JMar 22, 201643.5 KBSOT1793-1English
^{Package Information}
98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins

PDFRev CFeb 26, 201646.9 KBSOT1802-1English
^{White Paper}
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

PDFRev 4Sep 8, 2011965.1 KB50VRFLDMOSWPEnglish

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Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Models
MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 2Jul 22, 2011 00:00:001.2 MBMRF6V12500H_MDL_AWR
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^Models
MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00524.8 KBMRF6V12500H_MDL_ADS
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^Calculators
MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 2010 00:00:0050.2 KBMRF6V12500H_MTTF_CALC
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960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

Product Details

Features

RF Performance Table

Typical Pulse Performance

Buy/Parametrics

Documentation

Filter by

MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

RF Solutions for Commercial Aerospace

Using Data Sheet Impedances for RF LDMOS Devices

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

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