MRF6V10010N|1090 MHz, 10 W, 50 V

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MRF6V10010N

The MRF6V10010NR4 is an RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

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Data Sheet

Application Notes

Product Details

Features

Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
Power Gain: 25 dB

Drain Efficiency: 69%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

Part numbers include: MRF6V10010N.

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Documentation

Quick reference to our documentation types.

1-5 of 6 documents

^{Data Sheet}
MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

PDFRev 3Jul 12, 2010657.7 KBMRF6V10010NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^Brochure
RF Solutions for Commercial Aerospace

PDFRev 2Sep 4, 20151.9 MBBR1608English
^{Package Information}
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins

PDFRev EMar 22, 201651.5 KBSOT1811-1English
^{White Paper}
Designing with Plastic RF Power Transistors White Paper

PDFRev 2Sep 24, 2015911.8 KBRFPLASTICWPEnglish
^{White Paper}
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

PDFRev 4Sep 8, 2011965.1 KB50VRFLDMOSWPEnglish

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Design Resources

Design Files

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1 design file

Receive the full breakdown. See the product footprint and more in the eCad file.

^Calculators
MRF6V10010NR4 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 2010 00:00:0058.4 KBMRF6V10010N_MTTF_CALC
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1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

RF Solutions for Commercial Aerospace

98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins

Designing with Plastic RF Power Transistors White Paper

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

Design Resources

Design Files

Filter by

MRF6V10010NR4 RF Power Electromigration MTTF Calculation Program

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