MRF6V10010N|1090 MHz, 10 W, 50 V | NXP Semiconductors

Automotive

Industrial

Consumer

Technologies

1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

MRF6V10010N
NRND
  • This page contains information on a product that is not recommended for new designs.
The MRF6V10010NR4 is an RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

See product image

Product Details

Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
    Power Gain: 25 dB
    Drain Efficiency: 69%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

Buy/Parametrics

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPMRF6V10010Nen 6 Application Note Application Note t789 1 Brochure Brochure t518 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 White Paper White Paper t530 2 en_US en_US en Data Sheet Data Sheet 1 1 3 English RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. 1225476923258682160442 PSP 657.7 KB None None documents None 1225476923258682160442 /docs/en/data-sheet/MRF6V10010N.pdf 657718 /docs/en/data-sheet/MRF6V10010N.pdf MRF6V10010N documents N N 2016-10-31 MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MRF6V10010N.pdf /docs/en/data-sheet/MRF6V10010N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 12, 2010 980000996212993340 Data Sheet Y N MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Brochure Brochure 1 3 2 English Comprehensive portfolio of RF power transistors for commercial aerospace applications. 1243895030259713217473 PSP 1.9 MB None None documents None 1243895030259713217473 /docs/en/brochure/BR1608.pdf 1872765 /docs/en/brochure/BR1608.pdf BR1608 documents N N 2016-10-31 RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf /docs/en/brochure/BR1608.pdf Brochure N 712453003803778552 2024-03-13 pdf N en Sep 4, 2015 712453003803778552 Brochure Y N RF Solutions for Commercial Aerospace Package Information Package Information 1 4 E English 98ASB15740C, 466-03, PLD-1.5 V1003176855715 PSP 51.5 KB None None documents None V1003176855715 /docs/en/package-information/98ASB15740C.pdf 51489 /docs/en/package-information/98ASB15740C.pdf SOT1811-1 documents N N 2016-10-31 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf /docs/en/package-information/98ASB15740C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins White Paper White Paper 2 5 2 English Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. 1415247676533716175304 PSP 911.8 KB None None documents None 1415247676533716175304 /docs/en/white-paper/RFPLASTICWP.pdf 911768 /docs/en/white-paper/RFPLASTICWP.pdf RFPLASTICWP documents N N 2016-10-31 Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf /docs/en/white-paper/RFPLASTICWP.pdf White Paper N 918633085541740938 2024-03-13 pdf N en Sep 24, 2015 918633085541740938 White Paper Y N Designing with Plastic RF Power Transistors White Paper 6 4 English In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. 1221085238616699797555 PSP 965.1 KB None None documents None 1221085238616699797555 /docs/en/white-paper/50VRFLDMOSWP.pdf 965097 /docs/en/white-paper/50VRFLDMOSWP.pdf 50VRFLDMOSWP documents N N 2016-10-31 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf /docs/en/white-paper/50VRFLDMOSWP.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Sep 8, 2011 918633085541740938 White Paper Y N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications false 0 MRF6V10010N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Brochure 1 /docs/en/brochure/BR1608.pdf 2016-10-31 1243895030259713217473 PSP 3 Sep 4, 2015 Brochure Comprehensive portfolio of RF power transistors for commercial aerospace applications. None /docs/en/brochure/BR1608.pdf English documents 1872765 None 712453003803778552 2024-03-13 N /docs/en/brochure/BR1608.pdf RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf documents 712453003803778552 Brochure N en None Y pdf 2 N N RF Solutions for Commercial Aerospace 1.9 MB BR1608 N 1243895030259713217473 Data Sheet 1 /docs/en/data-sheet/MRF6V10010N.pdf 2016-10-31 1225476923258682160442 PSP 1 Jul 12, 2010 Data Sheet RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. None /docs/en/data-sheet/MRF6V10010N.pdf English documents 657718 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6V10010N.pdf MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MRF6V10010N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET 657.7 KB MRF6V10010N N 1225476923258682160442 Package Information 1 /docs/en/package-information/98ASB15740C.pdf 2016-10-31 V1003176855715 PSP 4 Mar 22, 2016 Package Information 98ASB15740C, 466-03, PLD-1.5 None /docs/en/package-information/98ASB15740C.pdf English documents 51489 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15740C.pdf 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins 51.5 KB SOT1811-1 N V1003176855715 White Paper 2 /docs/en/white-paper/RFPLASTICWP.pdf 2016-10-31 1415247676533716175304 PSP 5 Sep 24, 2015 White Paper Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. None /docs/en/white-paper/RFPLASTICWP.pdf English documents 911768 None 918633085541740938 2024-03-13 N /docs/en/white-paper/RFPLASTICWP.pdf Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf documents 918633085541740938 White Paper N en None Y pdf 2 N N Designing with Plastic RF Power Transistors White Paper 911.8 KB RFPLASTICWP N 1415247676533716175304 /docs/en/white-paper/50VRFLDMOSWP.pdf 2016-10-31 1221085238616699797555 PSP 6 Sep 8, 2011 White Paper In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. None /docs/en/white-paper/50VRFLDMOSWP.pdf English documents 965097 None 918633085541740938 2022-12-07 N /docs/en/white-paper/50VRFLDMOSWP.pdf 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf documents 918633085541740938 White Paper N en None Y pdf 4 N N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications 965.1 KB 50VRFLDMOSWP N 1221085238616699797555 true Y Products

Documentation

Quick reference to our documentation types.

Filters

6 documents

Compact List

Application Note (1)
Brochure (1)
Data Sheet (1)
Package Information (1)
White Paper (2)

Design Files

Quick reference to our design files types.
Filters

1 design file

Support

What do you need help with?

  • Narrow your search
Search