A2T21H100-25S|2110-2170 MHz, 18 W, 28 V

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A2T21H100-25S

The A2T21H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

See product image

Data Sheet

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 250 mA, V_GSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	52.1	8.2	–32.4
2140 MHz	17.4	51.0	8.0	–33.1
2170 MHz	17.4	50.5	8.0	–35.0

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

PDFRev 1Jan 26, 2022443.3 KBA2T21H100-25SEnglish
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

PDFRev AFeb 15, 201656.1 KBSOT1797-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00547.9 KBA2T21H100_25S_MDL_ADS
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A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_PEAKING_CLASS_C_SP
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A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_CARRIER_250MA_SP
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A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:001.4 MBA2T21H100_25S_MDL_AWR
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A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_PEAKING_300MA_SP
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2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter By

Support

What do you need help with?

Suggested Links

2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter By

Support

What do you need help with?

Suggested Links

2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet