GD3160 silicon and enablement (documentation, software and boards) are available for selected customers (NDA required). For additional information and sample availability contact support or your local sales representative.
The GD3160 is an improved, advanced single-channel high-voltage isolated gate driver with enhanced features for driving and protecting silicon carbide (SiC) MOSFETs and functional safety.
The GD3160's SPI programmable drive, protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch.
ISO 26262 compliant and automotive qualified, the GD3160 integrates BOM saving and functional safety features to support implementing ASIL D compliant and power density efficient xEV inverter solutions.
Participating products are available for a minimum of 10 years. Designated participating products developed for the automotive, telecom and medical segments are available for a minimum of 15 years.
Advanced High Voltage Isolated Gate Driver for IGBT and SiC MOSFETs
MPC5775B and MPC5775E Microcontrollers for Battery Management Systems (BMS) and Inverter Applications
Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver
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Include 0 NRND
Part | Order | CAD Model | Status | Device Function | Logic Level (V) | Package Type | Package Termination Count | Budgetary Price excluding tax | Frequency (Max) (kHz) | Load Current (IL) [TYP] (A) | Number of Channels | Protection | Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON)) | Load Supply Voltage (Min) (V) | Load Supply Voltage (Max) (V) | Supply Voltage [min] (V) | Supply Voltage [max] (V) | Interface and Input Control | SPI [bits] | Ambient Operating Temperature (Min to Max) (℃) | ASIL Certification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | HV Isolated IGBT & SiC Single gate driver IC | 3.3 | SSOP32 | 32 | 1K @ US$4.47 | 100 | 15 | 1 | desaturation, overtemperature, real time monitor, segmented drive, short-circuit, two-level turn off, undervoltage | 500 | -12 | 25 | 4.5 | 40 | SPI / PWM | 24 | -40 to 125 | up to ASIL D | |||
Active | HV Isolated IGBT & SiC Single gate driver IC | 3.3 | SSOP32 | 32 | 1K @ US$4.47 | 100 | 15 | 1 | desaturation, overtemperature, real time monitor, segmented drive, short-circuit, two-level turn off, undervoltage | 500 | -12 | 25 | 4.5 | 40 | SPI / PWM | 24 | -40 to 125 | up to ASIL D | |||
Active | HV Isolated IGBT & SiC Single gate driver IC | 5 | SSOP32 | 32 | 1K @ US$4.47 | 100 | 15 | 1 | desaturation, overtemperature, real time monitor, segmented drive, short-circuit, two-level turn off, undervoltage | 500 | -12 | 25 | 4.75 | 40 | SPI / PWM | 24 | -40 to 125 | up to ASIL D | |||
Active | HV Isolated IGBT & SiC Single gate driver IC | 5 | SSOP32 | 32 | 1K @ US$4.47 | 100 | 15 | 1 | desaturation, overtemperature, real time monitor, segmented drive, short-circuit, two-level turn off, undervoltage | 500 | -12 | 25 | 4.75 | 40 | SPI / PWM | 24 | -40 to 125 | up to ASIL D |
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4 documents
Compact List
4 documents
Compact List
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3 software files
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Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs
