3 Phase Reference Design for HP Drive Featuring GD3160

RDGD3160I3PH5EVB

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The RDGD3160I3PH5EVB is a three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry.

The evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.

Block Diagram

GD3160 Block Diagram

GD3160 Block Diagram
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Supported Devices

Power Management

Powertrain and Engine Control

  • GD3160: Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs

System Basis Chips

  • FS6500: Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver

Processors and Microcontrollers

Ultra-Reliable MPC57xx MCUs

  • MPC5777C: Ultra-Reliable MPC5777C MCU for Automotive and Industrial Engine Management

Interfaces

3.3 V / 5 V IO CAN Transceivers

  • TJA1042: High-Speed CAN Transceiver with Standby Mode

Features

Gate Driver

  • Integrated Galvanic signal isolation (up to 8 kV)
  • High gate current integrated: 15 A source/sink capable
  • SPI interface for safety monitoring, configuration and diagnostic reporting
  • Fail-safe state management from LV and HV domain for user-selectable safe state
  • Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
  • Configurable desaturation and current sense optimized for protecting SiC and IGBTs
  • Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
  • Integrated ADC for monitoring parameters from HV domain
  • CMTI > 100 V/ns
  • Available in 5.0 or 3.3 V logic interface variants
  • Certified compliant with ISO 26262, supporting ASIL D level functional safety

GD3160

  • Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

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  • RDGD3160I3PH5EVB
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  • 3 Phase Reference Design for HP Drive Featuring GD3160.

  • Three phase reference design evaluation kit featuring GD3160 gate drive devices for IGBT or SiC MOSFET

    Kit Contains

    • Quick Start Guide
  • $442.63 USD
  • For a quantity of 1
    • Availability: Pending Stock
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