Advanced High Voltage Isolated Gate Driver for IGBT and SiC MOSFETs
Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs
GD3160 silicon and enablement (documentation, software and boards) are available for selected customers (NDA required). For additional information and sample availability contact support or your local sales representative.
The GD3160 is an improved, advanced single-channel high-voltage isolated gate driver with enhanced features for driving and protecting silicon carbide (SiC) MOSFETs and functional safety.
The GD3160's SPI programmable drive, protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch.
ISO 26262 compliant and automotive qualified, the GD3160 integrates BOM saving and functional safety features to support implementing ASIL D compliant and power density efficient xEV inverter solutions.
Product Details
Block Diagram
Features
Key Features
- HV isolated IGBT and SiC single gate driver IC device functions
- Load current(IL) 15 A (Typ)
- Single channel
- Drain-to-source on resistance 500 mOhm RDS(ON) (Typ)
- Load supply voltage min. -12 V, max. 25 V
- Supply voltage min. 4.5 V, max. 40 V
- Ambient operating temperature -40 to 125 °C
- PWM and SPI interface and input controllers
Operation
- ±15 A split output gate current drive
- Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
- Max VCC output voltage: 23 V
Protection
- Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
- Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
- Improved PWM deadtime range for reduced switching losses (SiC)
- Programmable two-level turn off (2LTO) and soft-shutdown (SSD)
Functional Safety
- Additional programmable fault pin (INTA)
- Integrated HV fault management (FSISO)
- Programmable VCE output monitoring
Insulation / Isolation
- Minimum common mode transient immunity (CMTI) > 100 V/ns
- 5,000 Vrms galvanic isolation per UL1577 (planned)
Product Longevity Program
- This product is included in the NXP Product Longevity Program ensuring a stable supply of products for your embedded designs. The GD3160 is included in the 15-year program.
Related products
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TJA1101B, IEEE 100BASE-T1 Compliant Automotive Ethernet PHY Transceiver
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Documentation
Quick reference to our documentation types.
5 documents
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Product Brief
GD3160, Advanced gate driver for SiC MOSFETs and IGBTs - Product BriefFeatured
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User Manual
FlexGUI for GD3160 software User Manual
Design Resources
Hardware
Quick reference to our
board types.
1-5 of 11 hardware offerings
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Complete Solution3 Phase Reference Design for HP Drive Featuring GD3160
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Complete SolutionEV Power Inverter Control Reference Platform Gen 2
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Complete Solution3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160
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Additional hardware available. View our featured partner solutions.
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Evaluation and Development BoardsGD3160 Half-Bridge Evaluation Kit
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Evaluation and Development BoardsHalf-Bridge Evaluation Kit For RoadPak IGBT/SiC Modules Featuring the GD3160
Software
Quick reference to our software types.
3 software files
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Code Snippets
GD31xx Driver Example Code
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Debugging and Visualization Tools
FlexGUI for GD3100 and GD3160 Advanced Gate Driver Evaluation Software
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Debugging and Visualization Tools
FlexGUI: Software Tool for Evaluation of Reference Design Kits
Note: For better experience, software downloads are recommended on desktop.