2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Data Sheet

Product Details

Features

Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain: 17.3 dB

Drain Efficiency: 32.5%

Device Output Signal PAR: 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power
Pout @ 1 dB Compression Point ≥ 110 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Documentation

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3 documents

^{Data Sheet}
MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 2Mar 31, 2011760.1 KBMRF7S21110HEnglish
^{Package Information}
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDFRev HMar 22, 201644.1 KBSOT1792-1English
^{Package Information}
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDFRev JMar 22, 201643.5 KBSOT1793-1English

Design Resources

Design Files

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4 design files

^Models
MRF7S21110H, MRF7S21110HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00342.1 KBMRF7S21110H_MDL_ADS
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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Calculators
MRF7S21110HR3, MRF7S21110HSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 0Aug 8, 2007 00:00:0045.1 KBMRF7S21110H_MTTF_CALC
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2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Product Details

Features

Documentation

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MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

Design Resources

Design Files

Filter by

MRF7S21110H, MRF7S21110HS RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF7S21110HR3, MRF7S21110HSR3 RF Power Electromigration MTTF Calculation Program

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