AFT20S015N|100-3600 MHz, 1.5 W Avg., 28 V | NXP Semiconductors

Automotive

Industrial

Consumer

Technologies

100-3600 MHz 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors

AFT20S015N Active

  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

The AFT20S015NR1 and AFT20S015GNR1 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 100 to 3600 MHz.

See product image

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2110 MHz17.522.08.9–43.0–11
2140 MHz17.622.09.0–44.0–12
2170 MHz17.622.09.1–44.0–14

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1805 MHz18.021.09.2–42.0–11
1840 MHz18.122.09.2–44.0–10
1880 MHz18.022.09.1–45.0–10

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2300 MHz15.723.09.0–45.0–6
2400 MHz16.023.08.8–44.0–7
2500 MHz15.823.08.6–43.0–6
2600 MHz15.821.08.5–43.0–7
2700 MHz15.520.08.4–42.0–8

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N true 0 PSPAFT20S015Nen 5 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Airfast <sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1366407705757711971037 PSP 754.7 KB None None documents None 1366407705757711971037 /docs/en/data-sheet/AFT20S015N.pdf 754740 /docs/en/data-sheet/AFT20S015N.pdf AFT20S015N documents N N 2020-05-18 AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet /docs/en/data-sheet/AFT20S015N.pdf /docs/en/data-sheet/AFT20S015N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 17, 2020 980000996212993340 Data Sheet Y N AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet Application Note Application Note 1 2 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 4 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 5 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 AFT20S015N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 2 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 Data Sheet 1 /docs/en/data-sheet/AFT20S015N.pdf 2020-05-18 1366407705757711971037 PSP 1 Apr 17, 2020 Data Sheet AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Airfast <sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/AFT20S015N.pdf English documents 754740 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT20S015N.pdf AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet /docs/en/data-sheet/AFT20S015N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet 754.7 KB AFT20S015N N 1366407705757711971037 Package Information 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 4 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 5 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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